Memory

Part Number	Description / PDF	Quantity
MT46H16M32LFBQ-5 AAT:C Micron Technology	IC DRAM 512MBIT PARALLEL 90VFBGA	0
MT46H32M32LFB5-5 AAT:B Micron Technology	IC DRAM 1GBIT PARALLEL 90VFBGA	0
MT25QL256ABA8E12-1SIT TR Micron Technology	IC FLASH 256MBIT SPI 24TPBGA	0
MT29F2G16ABAGAWP-AIT:G Micron Technology	IC FLASH 2GBIT PARALLEL 48TSOP I	0
MT25QL01GBBB8E12-0AUT Micron Technology	IC FLSH 1GBIT SPI 133MHZ 24TPBGA	0
MT53E128M32D2DS-053 WT:A TR Micron Technology	IC DRAM 4GBIT 1.866GHZ 200WFBGA	0
MT29F2G16ABAGAWP-AIT:G TR Micron Technology	IC FLASH 2GBIT PARALLEL 48TSOP I	0
MT53E768M32D4DT-053 WT:E TR Micron Technology	IC DRAM 24GBIT 1.866GHZ 200VFBGA	0
MT55V512V36PF-6 Micron Technology	IC SRAM 18MBIT PARALLEL 165FBGA	284
MTFC8GACAENS-5M AAT TR Micron Technology	IC FLASH 64GBIT MMC 153TFBGA	0
MT46V16M8TG-6T L:D TR Micron Technology	IC DRAM 128MBIT PARALLEL 66TSOP	165
MT41K128M16JT-107 IT:K TR Micron Technology	IC DRAM 2GBIT PARALLEL 96FBGA	2270
MT29F2G08ABAEAH4:E TR Micron Technology	IC FLASH 2GBIT PARALLEL 63VFBGA	73
MT58L64L36PT-6 Micron Technology	IC SRAM 2MBIT PARALLEL 100TQFP	7414
EDB1316BDBH-1DAAT-F-D Micron Technology	IC DRAM 1GBIT PARALLEL 134VFBGA	0
EDB5432BEBH-1DAUT-F-D Micron Technology	IC DRAM 512MBIT PAR 134VFBGA	0
MT29F2G16ABBEAHC-AIT:E TR Micron Technology	IC FLASH 2GBIT PARALLEL 63VFBGA	654
MT29F8G08ABACAWP-AIT:C TR Micron Technology	IC FLASH 8GBIT PARALLEL 48TSOP I	0
MT29E512G08CEHBBJ4-3:B Micron Technology	IC FLASH 512GBIT PAR 132VBGA	0
MT53E384M32D2DS-046 AUT:E TR Micron Technology	IC DRAM 12GBIT 2.133GHZ 200WFBGA	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)