Memory

Part Number	Description / PDF	Quantity
BR24G32NUX-3ATTR ROHM Semiconductor	IC EEPROM 32KBIT VSON008X2030	3211
BR24G04F-3GTE2 ROHM Semiconductor	IC EEPROM 4KBIT I2C 400KHZ 8SOP	2104
BR24C08-RMN6TP ROHM Semiconductor	IC EEPROM 8KBIT I2C 100KHZ 8SO	0
BR93A56RF-WME2 ROHM Semiconductor	IC EEPROM 2KBIT SPI 2MHZ 8SOP	2470
BR24C16-DS6TP ROHM Semiconductor	IC EEPROM 16KBIT I2C 8TSSOP	0
BU9883FV-WE2 ROHM Semiconductor	IC EEPROM 6KBIT I2C 16SSOPB	0
BR24L16FVT-WE2 ROHM Semiconductor	IC EEPROM 16KBIT I2C 8TSSOP	5169
BR93G56F-3AGTE2 ROHM Semiconductor	IC EEPROM 2KBIT SPI 3MHZ 8SOP	1585
BR25A256FJ-3MGE2 ROHM Semiconductor	IC EEPROM 256KBIT SPI 8SOPJ	2500
BR24L01AFVT-WE2 ROHM Semiconductor	IC EEPROM 1K I2C 400KHZ 8TSSOP	5436
BR25320N-10SU-2.7 ROHM Semiconductor	IC EEPROM 32KBIT SPI 3MHZ 8SOIC	0
BR24T128NUX-WTR ROHM Semiconductor	IC EEPROM 128KBIT VSON008X2030	6188
BR93L56RFVM-WTR ROHM Semiconductor	IC EEPROM 2KBIT SPI 2MHZ 8MSOP	2548
BR24T32F-WE2 ROHM Semiconductor	IC EEPROM 32KBIT I2C 400KHZ 8SOP	2372
BR24G64NUX-3ATTR ROHM Semiconductor	IC EEPROM 64KBIT VSON008X2030	8666
MSM5117400F-60T3-K-7 ROHM Semiconductor	IC DRAM 16MBIT PARALLEL KBU	12
BR25S128F-WE2 ROHM Semiconductor	IC EEPROM 128K SPI 20MHZ 8SOP	2500
BR93L66RF-WE2 ROHM Semiconductor	IC EEPROM 4KBIT SPI 2MHZ 8SOP	2627
BR93L86RFJ-WE2 ROHM Semiconductor	IC EEPROM 16KBIT SPI 2MHZ 8SOPJ	2428
BR93G66FVM-3GTTR ROHM Semiconductor	IC EEPROM 4KBIT SPI 3MHZ 8MSOP	3000

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)