Memory

Part Number	Description / PDF	Quantity
BR93G56NUX-3BTTR ROHM Semiconductor	IC EEPROM 2KBIT SPI VSON008X2030	3850
BR24G04FVJ-3GTE2 ROHM Semiconductor	IC EEPROM 4KBIT I2C 8TSSOP	1191
BU9888FV-WE2 ROHM Semiconductor	IC EEPROM 4K SPI 2MHZ 8SSOPB	2490
BR34L02FVT-WE2 ROHM Semiconductor	IC EEPROM 2KBIT I2C 8TSSOPB	0
MR45V256AMAZAAT-L ROHM Semiconductor	IC FRAM 256KBIT SPI 15MHZ 8SOP	2780
BR24G128FJ-3AGTE2 ROHM Semiconductor	IC EEPROM 128KBIT I2C 1MHZ 8SOPJ	2482
BR24G64FVJ-3GTE2 ROHM Semiconductor	IC EEPROM 64KBIT I2C 8TSSOP	389
BR24T32NUX-WTR ROHM Semiconductor	IC EEPROM 32KBIT VSON008X2030	1338
BR25H640FVT-2ACE2 ROHM Semiconductor	IC EEPROM 64KBIT SPI 8TSSOPB	3000
BR93G46F-3BGTE2 ROHM Semiconductor	IC EEPROM 1KBIT SPI 3MHZ 8SOP	1556
BR24G08-3 ROHM Semiconductor	IC EEPROM 8KBIT I2C 1MHZ 8DIP	1734
BR25S640FVT-WE2 ROHM Semiconductor	IC EEPROM 64KBIT SPI 8TSSOPB	1689
BR24L01AFVM-WTR ROHM Semiconductor	IC EEPROM 1KBIT I2C 400KHZ 8MSOP	533
BR24G16FVM-3AGTTR ROHM Semiconductor	IC EEPROM 16KBIT I2C 1MHZ 8MSOP	911
BR25S320FV-WE2 ROHM Semiconductor	IC EEPROM 32KBIT SPI 8SSOPB	0
BR24G08F-3GTE2 ROHM Semiconductor	IC EEPROM 8KBIT I2C 400KHZ 8SOP	587
BR24T64FVM-WTR ROHM Semiconductor	IC EEPROM 64KBIT I2C 8MSOP	7517
BR24G04NUX-3ATTR ROHM Semiconductor	IC EEPROM 4KBIT I2C VSON008X2030	761
BR24C16-RMN6TP ROHM Semiconductor	IC EEPROM 16KBIT I2C 100KHZ 8SO	3137
MR45V064BMAZAATL ROHM Semiconductor	IC FRAM 64KBIT SPI 40MHZ 8SOP	32

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)