Memory

Part Number	Description / PDF	Quantity
BR24G1MFJ-3AGTE2 ROHM Semiconductor	IC EEPROM 1MBIT I2C 1MHZ 8SOPJ	643
BR24C02-RMN6TP ROHM Semiconductor	IC EEPROM 2KBIT I2C 100KHZ 8SO	0
BR25H160F-2CE2 ROHM Semiconductor	IC EEPROM 16KBIT SPI 10MHZ 8SOP	2124
BR24G128FVM-3AGTTR ROHM Semiconductor	IC EEPROM 128KBIT I2C 1MHZ 8MSOP	2760
BR25640N-10SU-2.7 ROHM Semiconductor	IC EEPROM 64KBIT SPI 3MHZ 8SOIC	0
BR25G320FJ-3GE2 ROHM Semiconductor	IC EEPROM 32KBIT SPI 20MHZ 8SOPJ	1455
BR24T128-WZ ROHM Semiconductor	IC EEPROM 128KBIT I2C DIP8K	1952
BR24C32A-10TU-2.7 ROHM Semiconductor	IC EEPROM 32KBIT I2C 8TSSOP	0
BR24G32FVM-3GTTR ROHM Semiconductor	IC EEPROM 32KBIT I2C 8MSOP	250
BR93G86FVJ-3AGTE2 ROHM Semiconductor	IC EEPROM 16K SPI 3MHZ 8TSSOP	2485
BR24T128FVJ-WE2 ROHM Semiconductor	IC EEPROM 128KBIT I2C 8TSSOP	2523
BR24G02F-3AGTE2 ROHM Semiconductor	IC EEPROM 2KBIT I2C 1MHZ 8SOP	2260
BR25H010FJ-WCE2 ROHM Semiconductor	IC EEPROM 1KBIT SPI 5MHZ 8SOPJ	0
BR24T256FJ-WE2 ROHM Semiconductor	IC EEPROM 256KBIT I2C 8SOPJ	37
BR93H66RF-2CE2 ROHM Semiconductor	IC EEPROM 4KBIT SPI 2MHZ 8SOP	2480
BR24L04F-WE2 ROHM Semiconductor	IC EEPROM 4KBIT I2C 400KHZ 8SOP	1395
BR93A46RFVT-WME2 ROHM Semiconductor	IC EEPROM 1KBIT SPI 2MHZ 8TSSOPB	3000
BR93G76FVM-3GTTR ROHM Semiconductor	IC EEPROM 8K SPI 3MHZ 8MSOP	3000
BR24C02FJ-WE2 ROHM Semiconductor	IC EEPROM 2KBIT I2C 400KHZ 8SOPJ	0
BR25040-10TU-1.8 ROHM Semiconductor	IC EEPROM 4KBIT SPI 3MHZ 8TSSOP	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)