Memory

Part Number	Description / PDF	Quantity
M95128-DFMC6TG STMicroelectronics	IC EEPROM 128KBIT SPI 8UFDFPN	1795
M95128-WMN6P STMicroelectronics	IC EEPROM 128KBIT SPI 20MHZ 8SO	1102
M95M02-DRMN6TP STMicroelectronics	IC EEPROM 2MBIT SPI 5MHZ 8SO	51570
M95512-DRDW3TP/K STMicroelectronics	IC EEPROM 512KBIT SPI 8TSSOP	0
M95640-RMN6TP STMicroelectronics	IC EEPROM 64KBIT SPI 20MHZ 8SO	4915
M24M02-DRCS6TP/K STMicroelectronics	IC EEPROM 2MBIT I2C 1MHZ 8WLCSP	689
M48Z08-100PC1 STMicroelectronics	IC NVSRAM 64KBIT PAR 28PCDIP	1920
M95040-DFMC6TG STMicroelectronics	IC EEPROM 4KBIT SPI 8UFDFPN	1802
M95512-DWDW4TP/K STMicroelectronics	IC EEPROM 512KBIT SPI 8TSSOP	2200
M24C04-FMC6TG STMicroelectronics	IC EEPROM 4KBIT I2C 8UFDFPN	0
M24C02-DRDW8TP/K STMicroelectronics	IC EEPROM 2KBIT I2C 1MHZ 8TSSOP	6650
M24C32-DFMC6TG STMicroelectronics	IC EEPROM 32KBIT I2C 8UFDFPN	15
M24C16-FDW6TP STMicroelectronics	IC EEPROM 16KBIT I2C 8TSSOP	4647
M24C02-WDW6TP STMicroelectronics	IC EEPROM 2KBIT I2C 8TSSOP	0
M95128-RMN6TP STMicroelectronics	IC EEPROM 128KBIT SPI 20MHZ 8SO	1
M24C64-RDW6TP STMicroelectronics	IC EEPROM 64KBIT I2C 1MHZ 8TSSOP	0
M34E04-FMC9TG STMicroelectronics	IC EEPROM 4KBIT I2C 1MHZ 8UFDFPN	10000
M93C66-RMN3TP/K STMicroelectronics	IC EEPROM 4KBIT SPI 2MHZ 8SO	472
M24C01-WDW6TP STMicroelectronics	IC EEPROM 1KBIT I2C 8TSSOP	8744
M24M01-DWDW3TP/K STMicroelectronics	IC EEPROM 1MBIT I2C 1MHZ 8TSSOP	2203

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)