Memory

Part Number	Description / PDF	Quantity
M95320-RDW6TP STMicroelectronics	IC EEPROM 32KBIT SPI 8TSSOP	7765
M24512-DFMC6TG STMicroelectronics	IC EEPROM 512KBIT I2C 8UFDFPN	4873
M24C16-FMH6TG STMicroelectronics	IC EEPROM 16KBIT I2C 5UFDFPN	9300
M24M01-RMN6P STMicroelectronics	IC EEPROM 1MBIT I2C 1MHZ 8SO	894
M95080-DRMN3TP/K STMicroelectronics	IC EEPROM 8KBIT SPI 20MHZ 8SO	0
M24C04-WMN6P STMicroelectronics	IC EEPROM 4KBIT I2C 400KHZ 8SO	11280
M24C04-FMN6TP STMicroelectronics	IC EEPROM 4KBIT I2C 400KHZ 8SO	9685
M95080-DRDW8TP/K STMicroelectronics	IC EEPROM 8KBIT SPI 20MHZ 8TSSOP	0
M95010-RDW6TP STMicroelectronics	IC EEPROM 1KBIT SPI 20MHZ 8TSSOP	4926
M95160-RMB6TG STMicroelectronics	IC EEPROM 16KBIT SPI 8UFDFPN	9498
M24C64-FMH6TG STMicroelectronics	IC EEPROM 64KBIT I2C 5UFDFPN	37275
M93C66-RMC6TG STMicroelectronics	IC EEPROM 4KBIT SPI 1MHZ 8UFDFPN	46
M24512-RDW6TP STMicroelectronics	IC EEPROM 512KBIT I2C 8TSSOP	17263
M95080-DFDW6TP STMicroelectronics	IC EEPROM 8KBIT SPI 20MHZ 8TSSOP	0
M95040-DFMN6TP STMicroelectronics	IC EEPROM 4KBIT SPI 20MHZ 8SO	0
M95010-RMN6TP STMicroelectronics	IC EEPROM 1KBIT SPI 20MHZ 8SO	8693
M95320-RMN6TP STMicroelectronics	IC EEPROM 32KBIT SPI 20MHZ 8SO	229
M95256-RDW6TP STMicroelectronics	IC EEPROM 256KBIT SPI 8TSSOP	3799
M95512-WMN6P STMicroelectronics	IC EEPROM 512KBIT SPI 16MHZ 8SO	2428
M24512-DRMF3TG/K STMicroelectronics	IC EEPROM 512KBIT I2C 1MHZ 8MLP	7623

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)