Memory

Part Number	Description / PDF	Quantity
CY7C1355C-133AXCKG Rochester Electronics	ZBT SRAM, 256KX36, 6.5NS, CMOS	472
CYM1861AV33PM-25C Rochester Electronics	SRAM MODULE, 2MX32, 25NS PSMA72	67
29705ADM/B Rochester Electronics	SRAM	985
HM4-6504B-9 Rochester Electronics	STANDARD SRAM, 4KX1, 220NS, CMOS	298
27S21APC Rochester Electronics	OTP ROM, 256X4, 60NS, TTL	6246
CY7C1370DV25-167CKJ Rochester Electronics	SYNC RAM	1187
CY7C1399B-10ZCT Rochester Electronics	CACHE SRAM, 32KX8, 10NS PDSO28	30000
27S47SADM/B Rochester Electronics	27S47SADM/B	61
D27512-25 Rochester Electronics	UVPROM	623
CY7C027V-25ACKJ Rochester Electronics	DUAL PORT RAM	272
CG6747AT Rochester Electronics	SRAM CG6747AT	2663
CY7C14702BC Rochester Electronics	SYNC RAM	56
CY7C1059DV33-12ZSXQKO Rochester Electronics	STANDARD SRAM, 1MX8, 12NS, CMOS	530
27S29ADC Rochester Electronics	4,096-BIT (512X8) BIPOLAR PROM	549
CY7C263-35WM Rochester Electronics	8K X 8 POWER-SWITCHED AND REPROG	8
CY7C1347S-166BGCMG Rochester Electronics	SYNC RAM	1793
CY62157DG30LL-55ZSXI Rochester Electronics	ASYNC RAM	1250
CY7C1145KV18-400ZXC Rochester Electronics	SYNC RAM	19
MC27128A-20/BYA Rochester Electronics	DUAL MARKED (8202503YA)	237
CY10E422L-7KCQ Rochester Electronics	STANDARD SRAM, 256X4, 7NS	460

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)