Memory

Part Number	Description / PDF	Quantity
S26KL256SDABHB030A Rochester Electronics	PARALLEL NOR FLASH, (32 MB)	170
27C16Q45/B Rochester Electronics	27C16Q45/B	449
27LS00DM/B Rochester Electronics	STATIC RAM; 256 X 1	508
MD27C256-20/B Rochester Electronics	32 X 8 CMOS EPROM; PACKAGE WILL	0
CY7C1328G-133AXIKJ Rochester Electronics	SYNC RAM	181
27S23JC Rochester Electronics	27S23JC	4235
CY7C1021BNV33-10ZC Rochester Electronics	STANDARD SRAM, 64KX16, 15NS	234
93425FM/B Rochester Electronics	1K X 1 TTL SRAM	3580
CY7C194-25SCQ Rochester Electronics	DUAL PORT RAM	407
CY7C1041BN-20ZSXAKJ Rochester Electronics	ASYNC RAM	539
CY7C1011DV33-10IKA Rochester Electronics	STANDARD SRAM, 128KX16	2190
CY7C1324H-133AXCKJ Rochester Electronics	SYNC RAM	172
CY62146DV30LL-70ZSI Rochester Electronics	ASYNC RAM	403
CY7C09269V-7AXCKJ Rochester Electronics	DUAL PORT RAM	252
MC2716M/BJA Rochester Electronics	DUAL MARKED (7802201JA)	231
CY7C199CN-12VXAKJT Rochester Electronics	DUAL PORT RAM	1000
CY7C1350G-133AXCB Rochester Electronics	SYNC RAM	360
CY7C199C-20ZIT Rochester Electronics	STANDARD SRAM, 32KX8, 20NS	1226
MR27C256-25/B Rochester Electronics	32 X 8 CMOS EPROM	47
CY62137VNLL-70ZXET Rochester Electronics	2-MBIT (128K X 16) SRAM	6000

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)