Memory

Part Number	Description / PDF	Quantity
CY7C1019BV33-12VI Rochester Electronics	128K X 8 STATIC RAM	644
CY62137CV30LL-55BAI Rochester Electronics	STANDARD SRAM, 128KX16	17513
CY7C1021BV33L-15ZXI Rochester Electronics	SRAM CHIP ASYNC SINGLE 3.3V 1M B	89
5962-8996701MXA Rochester Electronics	OTP ROM, 8KX8, 25NS, CMOS	18
CY7C1351B-100BGCT Rochester Electronics	ZBT SRAM, 128KX36, 8.5NS	67
CY62126DV30LL-55BVXI Rochester Electronics	STANDARD SRAM, 64KX16, 55NS	1791
CY62157DV20L-55BVI Rochester Electronics	STANDARD SRAM, 512KX16, 55NS	1889
CY62256VL-70SNCT Rochester Electronics	STANDARD SRAM, 32KX8, 70NS	6000
CY62148CV30LL-55BVI Rochester Electronics	STANDARD SRAM, 512KX8, 55NS	927
CY7C1362A-166AJC Rochester Electronics	IC SRAM 9MBIT PARALLEL 100TQFP	222
X28C010FI-15 Rochester Electronics	EEPROM, 128KX8, 150NS, PARALLEL,	15
CY27H256-35ZC Rochester Electronics	OTP ROM, 32KX8, 35NS PDSO28	379
CY7C1362C-166BZC Rochester Electronics	CACHE SRAM, 512KX18, 3.5NS	238
CY7C1011CV33-15BVI Rochester Electronics	STANDARD SRAM, 128KX16	2439
TN28F020-90 Rochester Electronics	FLASH, 256KX8, 90NS, PQCC32	526
CY7C1021CV33-8BAXC Rochester Electronics	STANDARD SRAM, 64KX16, 8NS	481
CY7C1347A-117AC Rochester Electronics	STANDARD SRAM, 128KX36	14189
CY7C293A-20PC Rochester Electronics	OTP ROM, 2KX8, 20NS	6329
CY27H010-55WC Rochester Electronics	UVPROM, 128KX8, 55NS CDIP32	1251
CY7C1363B-117BGC Rochester Electronics	CACHE SRAM, 512KX18, 7.5NS	2272

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)