Memory

Part Number	Description / PDF	Quantity
CY7C1019CV33-12BVXI Rochester Electronics	STANDARD SRAM, 128KX8	2466
CY7C194BN-25VC Rochester Electronics	STANDARD SRAM, 64KX4, 25NS, CMOS	656
FM25H20-PG Rochester Electronics	FRAM SERIAL MEMORY 256KX8	38145
CY62256NLL-70ZXC Rochester Electronics	STANDARD SRAM, 32KX8, 70NS	912
CY7C1362A-166ACT Rochester Electronics	CACHE SRAM, 512KX18, 3.5NS	1528
CY7C1018BV33-12VCT Rochester Electronics	STANDARD SRAM, 128KX8	2000
CY7C1011CV33-12BVI Rochester Electronics	STANDARD SRAM, 128KX16	2460
CY62126DV30LL-70ZI Rochester Electronics	STANDARD SRAM, 64KX16, 70NS	991
CY7C1386C-167AI Rochester Electronics	CACHE SRAM, 512KX36, 3.4NS	225
CY7C199-8ZCT Rochester Electronics	SRAM 256K-BIT 32K X 8 8NS	1500
CY7C1512KV18-200BZXI Rochester Electronics	QDR SRAM, 4MX18, 0.45NS	29
CY7C197-45VC Rochester Electronics	STANDARD SRAM, 256KX1, 45NS	11327
CY7C1399-12VC Rochester Electronics	CACHE SRAM, 32KX8, 12NS PDSO28	930
CY7C1041V33-20VCT Rochester Electronics	STANDARD SRAM, 256KX16, 20NS	489
CY7C130-55PC Rochester Electronics	IC SRAM 8KBIT PARALLEL 48DIP	32408
CY7C1032-10JC Rochester Electronics	CACHE SRAM, 64KX18, 10NS PQCC52	819
CY7C09389V-9AC Rochester Electronics	DUAL-PORT SRAM, 64KX18, 9NS	741
CY7C0851AV-133BBC Rochester Electronics	DUAL-PORT SRAM, 64KX36, 4NS PBGA	306
CDP1852D/B Rochester Electronics	CDP1852D/B	181
CY7C1049BV33-12VIT Rochester Electronics	STANDARD SRAM, 512KX8, 12NS	3518

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)