Memory

Part Number	Description / PDF	Quantity
CY62136VLL-55ZI Rochester Electronics	STANDARD SRAM, 128KX16	614
CY7C0831V-167AC Rochester Electronics	DUAL-PORT SRAM, 128KX18	264
CY7C1049B-20VIT Rochester Electronics	STANDARD SRAM, 512KX8, 20NS	11700
CY27H010-70WC Rochester Electronics	UVPROM, 128KX8, 70NS CDIP32	2772
CY7C1011CV33-15AXI Rochester Electronics	STANDARD SRAM, 128KX16	472
AM27C512-70DC Rochester Electronics	EPROM	65
CY7C1361A-117AC Rochester Electronics	IC SRAM 9MBIT PARALLEL 100TQFP	1384
CY7C168A-20VC Rochester Electronics	STANDARD SRAM, 4KX4, 20NS	191
CY7C1021BV33-12ZC Rochester Electronics	IC SRAM 1MBIT PARALLEL 44TSOP II	533
CY7C0851V-133BBC Rochester Electronics	DUAL-PORT SRAM, 64KX36	831
MD8031AH/B Rochester Electronics	MD8031AH/B	256
CY7C1021BV33-10ZC Rochester Electronics	IC SRAM 1MBIT PARALLEL 44TSOP II	1874
CY14B256L-SP25XC Rochester Electronics	NON-VOLATILE SRAM, 32KX8, 25NS	276
CY7C168A-25PC Rochester Electronics	STANDARD SRAM, 4KX4, 25NS, CMOS	993
CY7C199L-15VCT Rochester Electronics	STANDARD SRAM, 32KX8, 15NS	800
CY62147DV30LL-55BVIT Rochester Electronics	STANDARD SRAM, 256KX16, 55NS	6140
CY7C1347A-133AC Rochester Electronics	STANDARD SRAM, 128KX36	1211
CY62127DV30LL-70BVXI Rochester Electronics	STANDARD SRAM, 64KX16, 70NS	4164
CY7C109BNL-15VCT Rochester Electronics	SRAM 1M-BIT 128K X 8 15NS	750
CY7C1354BV25-166AC Rochester Electronics	ZBT SRAM, 256KX36, 3.5NS	4575

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)