Memory

Part Number	Description / PDF	Quantity
CY62136CV30LL-70BVXI Rochester Electronics	STANDARD SRAM, 128KX16	1512
CY7C1041BV33L-15ZCT Rochester Electronics	STANDARD SRAM, 256KX16, 15NS	600
CY7C1623KV18-300BZXC Rochester Electronics	SYNC RAM	113
CY7C1018CV33-10VC Rochester Electronics	STANDARD SRAM, 128KX8	872
CY7C1219F-133AC Rochester Electronics	CACHE SRAM, 32KX36, 4NS	170
CY7C1363A-117AC Rochester Electronics	IC SRAM 9MBIT PARALLEL 100TQFP	1474
CY7C1041B-15VXC Rochester Electronics	STANDARD SRAM, 256KX16, 15NS	175
CY7C1512-25VC Rochester Electronics	STANDARD SRAM, 64KX8, 25NS	5283
CY7C195-12VCT Rochester Electronics	STANDARD SRAM, 64KX4, 12NS	22000
CY62157CV18LL-70BAI Rochester Electronics	STANDARD SRAM, 512KX16, 70NS	12584
CY7C1360A1-166AJC Rochester Electronics	STANDARD SRAM, 256KX36	1501
CY7C1018CV33-10VCT Rochester Electronics	STANDARD SRAM, 128KX8	1000
5962-8606318QYA Rochester Electronics	OTP ROM, 32KX8, 70NS, CMOS	132
CY7C195-15VC Rochester Electronics	STANDARD SRAM, 64KX4, 15NS	1535
CY7C1373B-83BZC Rochester Electronics	ZBT SRAM, 1MX18, 10NS	92
CY62256L-70ZCT Rochester Electronics	STANDARD SRAM, 32KX8, 70NS	3000
CY62128VL-70SCT Rochester Electronics	STANDARD SRAM, 128KX8	71950
CY27C010-70WMB Rochester Electronics	UVPROM, 128KX8, 70NS CDIP32	29
CY7C1356A-133AI Rochester Electronics	ZBT SRAM, 512KX18, 4.2NS	664
CY62137CVLL-70BAI Rochester Electronics	STANDARD SRAM, 128KX16	825

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)