Memory

Part Number	Description / PDF	Quantity
CY62158DV30L-55BVI Rochester Electronics	STANDARD SRAM, 1MX8, 55NS	101
CY7C0850AV-167BBC Rochester Electronics	DUAL-PORT SRAM, 32KX36, 4NS	374
CY62256NLL-70ZI Rochester Electronics	STANDARD SRAM, 32KX8, 70NS	444
CY62256VNLL-70ZC Rochester Electronics	STANDARD SRAM, 32KX8, 70NS	897
CY7C1049BV33-12VC Rochester Electronics	STANDARD SRAM, 512KX8, 12NS	2264
CY7C1024AV33-10BGC Rochester Electronics	STANDARD SRAM, 128KX24	94
CY7C1020-15VC Rochester Electronics	STANDARD SRAM, 32KX16, 15NS	1015
CY7C1021CV33-15VI Rochester Electronics	STANDARD SRAM, 64KX16, 15NS	2144
CY27H010-45ZC Rochester Electronics	OTP ROM, 128KX8, 45NS PDSO32	1560
CY7C1380B-167AI Rochester Electronics	CACHE SRAM, 512KX36, 3.4NS	937
CY7C1615KV18-300BZXC Rochester Electronics	SYNC RAM	108
AM27C512-255DC Rochester Electronics	EPROM	20
CYD18S72V-100BBI Rochester Electronics	CYD18S72 - FLEX72 3.3V 256K X 72	0
CY7C197-25VCT Rochester Electronics	STANDARD SRAM, 256KX1, 25NS	34567
CY7C1353B-66AC Rochester Electronics	ZBT SRAM, 256KX18, 11NS	775
CY7C1359A-150AC Rochester Electronics	CACHE TAG SRAM, 256KX18, 3.8NS	194
CY7C1620KV18-250BZC Rochester Electronics	SYNC RAM	108
CY7C187-25VCT Rochester Electronics	STANDARD SRAM, 64KX1, 25NS, CMOS	2370
CY7C1387BV25-167BGC Rochester Electronics	CACHE SRAM, 1MX18, 3.4NS	72
CY62147DV30LL-55BVI Rochester Electronics	STANDARD SRAM, 256KX16, 55NS	1579

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)