Memory

Part Number	Description / PDF	Quantity
CY7C199-12VC Rochester Electronics	IC SRAM 256KBIT PARALLEL 28SOJ	4334
CY7C1423AV18-250BZXC Rochester Electronics	DDR SRAM, 2MX18, 0.45NS	7275
CY62146DV30L-70BVI Rochester Electronics	STANDARD SRAM, 256KX16, 70NS	193
CY7C136-30JC Rochester Electronics	DUAL-PORT SRAM, 2KX8, 30NS	581
CY62148VNLL70ZSXI Rochester Electronics	STANDARD SRAM, 512KX8, 70NS	117
CY7C1011CV33-12AC Rochester Electronics	STANDARD SRAM, 128KX16	1496
CY7C1382B-150AC Rochester Electronics	CACHE SRAM, 1MX18, 3.8NS	20
CY7C1049BV33-12ZCT Rochester Electronics	STANDARD SRAM, 512KX8	1000
CY7C1019CV33-15VXCT Rochester Electronics	STANDARD SRAM, 128KX8	2250
CY7C199N-15ZXC Rochester Electronics	STANDARD SRAM, 32KX8, 15NS	1961
CY7C09369V-9AC Rochester Electronics	DUAL-PORT SRAM, 16KX18, 9NS	311
CY62128VLL-55ZIT Rochester Electronics	SRAM 1M-BIT 128K X 8 55NS	7934
TN28F020-150 Rochester Electronics	EEPROM	52
27C128-30MD Rochester Electronics	EPROM	154
CY7C1339A-66AC Rochester Electronics	128K X 32 SYNCHRONOUS BURST SRAM	7402
CY7C1363A-150AJC Rochester Electronics	STANDARD SRAM, 512KX18, 6.5NS	237
CY7C1414SV18-200BZC Rochester Electronics	SYNC RAM	2763
CY27C010-200WMB Rochester Electronics	UVPROM, 128KX8, 200NS CDIP32	985
CY7C1019CV33-15VC Rochester Electronics	STANDARD SRAM, 128KX8	632
CY7C1357A-100ACT Rochester Electronics	SRAM CHIP SYNC SINGLE 3.3V 9M BI	1500

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)