Memory

Part Number	Description / PDF	Quantity
CY62126DV30LL-55ZXI Rochester Electronics	STANDARD SRAM, 64KX16, 55NS	607
CY7C09389V-9AXI Rochester Electronics	IC SRAM 1.152MBIT PAR 100TQFP	25
CY7C244-45WC Rochester Electronics	UVPROM, 4KX8, 45NS, CMOS	145
CY27C010-55ZC Rochester Electronics	OTP ROM, 128KX8, 55NS PDSO32	249
CY62157DV30LL-45ZSXI Rochester Electronics	STANDARD SRAM, 512KX16, 45NS	1027
CY7C1019CV33-15VXC Rochester Electronics	STANDARD SRAM, 128KX8	1714
PALC16R8-30DM Rochester Electronics	ELECTRICALLY ERASABLE PAL DEVIC	59
CY7C1347B-100AC Rochester Electronics	IC SRAM 4.5MBIT PARALLEL 100TQFP	3613
CY7C1046BV33-12VC Rochester Electronics	STANDARD SRAM, 1MX4, 12NS	63
CY7C1006B-15VCT Rochester Electronics	STANDARD SRAM, 256KX4, 15NS	5000
CY7C131-30NC Rochester Electronics	DUAL-PORT SRAM, 1KX8	455
CY7C194-20VC Rochester Electronics	STANDARD SRAM, 64KX4, 20NS, CMOS	4852
CY7C1339B-133BGI Rochester Electronics	CACHE SRAM, 128KX32, 4NS	205
CY7C1381C-100BGCT Rochester Electronics	SRAM SYNC QUAD18M-BIT 512K X 36	2500
CY62147CV33LL-70BVI Rochester Electronics	STANDARD SRAM, 256KX16, 70NS	2012
CY7C187-25VXC Rochester Electronics	STANDARD SRAM, 64KX1, 25NS, CMOS	1529
CY7C0830AV-133AI Rochester Electronics	DUAL-PORT SRAM, 64KX18, 4NS	49
CY7C1381C-100BGC Rochester Electronics	STANDARD SRAM, 512KX36, 8.5NS	1066
CY7C1356A-100AC Rochester Electronics	ZBT SRAM, 512KX18, 5NS	3206
CY7C1383B-117AC Rochester Electronics	STANDARD SRAM, 1MX18	58

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)