Memory

Part Number	Description / PDF	Quantity
CYD36S72V18-167BGXI Rochester Electronics	IC SRAM 36MBIT PARALLEL 484FBGA	31
X28C512EM-12 Rochester Electronics	EEPROM, 64KX8, 120NS, PARALLEL,	312
CY7C0832AV-133BBC Rochester Electronics	DUAL-PORT SRAM, 256KX18, 4NS	76
CY7C1648KV18-400BZC Rochester Electronics	SYNC RAM	121
CY62256LL-70ZRI Rochester Electronics	STANDARD SRAM, 32KX8, 70NS	5974
CY7C1362A-150ACT Rochester Electronics	CACHE SRAM, 512KX18, 3.5NS	750
CY7C1021CV33-15BAI Rochester Electronics	STANDARD SRAM, 64KX16, 15NS	2064
CY7C1387BV25-150AC Rochester Electronics	CACHE SRAM, 1MX18, 3.8NS	77
CY7C194-45VC Rochester Electronics	STANDARD SRAM, 64KX4, 45NS, CMOS	14511
CY62138CV33LL-70BAI Rochester Electronics	STANDARD SRAM, 256KX8, 70NS	344
CY62137CV30LL-70BVXI Rochester Electronics	STANDARD SRAM, 128KX16	463
CY7C1041CV33-12VI Rochester Electronics	STANDARD SRAM, 256KX16	9160
CY27C512-45ZC Rochester Electronics	OTP ROM, 64KX8, 45NS PDSO28	97
CY27C010-70ZC Rochester Electronics	OTP ROM, 128KX8, 70NS PDSO32	5060
CY7C1386B-167BGC Rochester Electronics	CACHE SRAM, 512KX36, 3.4NS	100
CY62256VNLL-70ZI Rochester Electronics	STANDARD SRAM, 32KX8, 70NS	490
CY7C1329-100AI Rochester Electronics	CACHE SRAM, 64KX32, 5NS	62
CY7C1041BV33L-15VC Rochester Electronics	STANDARD SRAM, 256KX16, 15NS	3580
CY7C243-25JC Rochester Electronics	OTP ROM, 4KX8, 25NS PQCC28	216
CY62148DV30LL-55ZSXI Rochester Electronics	STANDARD SRAM, 512KX8	255

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)