Memory

Part Number	Description / PDF	Quantity
CY7C0430CV-133BGI Rochester Electronics	FOUR-PORT SRAM, 64KX18	323
CY7C1357A-133ACT Rochester Electronics	SRAM CHIP SYNC SINGLE 3.3V 9M BI	500
CY7C1383BV25-100AC Rochester Electronics	STANDARD SRAM, 1MX18, 8.5NS	143
CY7C195-25VCT Rochester Electronics	STANDARD SRAM, 64KX4, 25NS	16000
CYD18S18V18-167BBAXI Rochester Electronics	IC SRAM 18MBIT PARALLEL 256FBGA	54
CY7C1361B-100BZI Rochester Electronics	CACHE SRAM, 256KX36, 8.5NS	47
CY62157CV30LL-70BAIT Rochester Electronics	STANDARD SRAM, 512KX16, 70NS	4000
CY7C1021CV33-10ZI Rochester Electronics	STANDARD SRAM, 64KX16	2378
CY7C265-50WMB Rochester Electronics	UVPROM, 8KX8, 25NS, CMOS, CDIP28	9
CY7C1021V33-15VC Rochester Electronics	STANDARD SRAM, 64KX16, 15NS	803
5962-8764814QYA Rochester Electronics	UVPROM, 64KX8, 250NS, CMOS	21
CY7C1041BV33-20ZI Rochester Electronics	STANDARD SRAM, 256KX16, 20NS	10920
CY7C09579V-100AC Rochester Electronics	IC SRAM 1.152MBIT PAR 144TQFP	1439
CY7C146-30NC Rochester Electronics	DUAL-PORT SRAM, 2KX8, 30NS	183
CY7C1362A-166BGC Rochester Electronics	CACHE SRAM, 512KX18, 3.5NS	285
CY7C271-45PC Rochester Electronics	OTP ROM, 32KX8, 45NS PDIP28	19
CY62126DV30L-55ZI Rochester Electronics	STANDARD SRAM, 64KX16, 55NS	3451
5962-88735033X Rochester Electronics	OTP ROM, 2KX8, 15NS, CMOS	59
CY7C1338B-100BGCT Rochester Electronics	CACHE SRAM, 128KX32, 8NS	3000
CY62128BLL-70ZAXE Rochester Electronics	STANDARD SRAM, 128KX8	4143

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)