Memory

Part Number	Description / PDF	Quantity
CY7C1021BL-15ZI Rochester Electronics	STANDARD SRAM, 64KX16, 15NS	1372
CY7C1049BV33-20VC Rochester Electronics	IC SRAM 4MBIT PARALLEL 36SOJ	4697
S34MS0XG100TFI000 Rochester Electronics	4 GB ECC, 1.8V SLC NAND FLASH	135
CY7C1347C-200AC Rochester Electronics	CACHE SRAM, 128KX36, 2.5NS	8136
CY7C235A-30PC Rochester Electronics	OTP ROM, 1KX8, 15NS	642
CY7C1024AV33-10ACT Rochester Electronics	STANDARD SRAM, 128KX24	750
CY62147DV18LL-70BVIT Rochester Electronics	STANDARD SRAM, 256KX16, 70NS	1068
CY7C199-25VIT Rochester Electronics	STANDARD SRAM, 32KX8, 25NS	4000
MD2114AL-3/B Rochester Electronics	1K X 4 SRAM	21
CY7C04314BV-133BGC Rochester Electronics	FOUR-PORT SRAM, 16KX18	550
CY62148ELL-55SXAKJ Rochester Electronics	ASYNC RAM	772
CY7C0830AV-133BBC Rochester Electronics	DUAL-PORT SRAM, 64KX18, 4NS	59
CY7C1018CV33-12VCT Rochester Electronics	STANDARD SRAM, 128KX8	6000
CY7C1399B-20ZC Rochester Electronics	CACHE SRAM, 32KX8, 20NS PDSO28	22867
CY7C1370BV25-167BZC Rochester Electronics	ZBT SRAM, 512KX36, 3.4NS	441
CY7C166-20VCT Rochester Electronics	STANDARD SRAM, 16KX4, 20NS, CMOS	24000
CY62148VLL-70ZXIT Rochester Electronics	SRAM 4M-BIT 512K X 8 70NS	1000
CY62137CV18LL-70BAIT Rochester Electronics	STANDARD SRAM, 128KX16	5000
CY7C09389V-6AC Rochester Electronics	DUAL-PORT SRAM, 64KX18, 6.5NS	42
CY7C1009B-15VCT Rochester Electronics	STANDARD SRAM, 128KX8	400

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)