Memory

Part Number	Description / PDF	Quantity
UPD44645184AF5-E40-FQ1 Renesas Electronics America	72-MBIT QDR II SRAM (4M X 18 BIT	93
71V632S5PFG8 Renesas Electronics America	IC SRAM 2MBIT PARALLEL 100TQFP	0
7132SA100CB Renesas Electronics America	IC SRAM 16KBIT PARALLEL SB48	0
70V37L15PFG Renesas Electronics America	IC SRAM 576KBIT PARALLEL 100TQFP	0
71V3559S75BQ Renesas Electronics America	IC SRAM 4.5MBIT PAR 165CABGA	189
71V3556SA133BQGI Renesas Electronics America	IC SRAM 4.5MBIT PAR 165CABGA	0
70V27L15PFG Renesas Electronics America	IC SRAM 512KBIT PARALLEL 100TQFP	249
70V631S10BF Renesas Electronics America	IC SRAM 4.5MBIT PAR 208CABGA	0
71V2546S133BG8 Renesas Electronics America	IC SRAM 4.5MBIT PARALLEL 119PBGA	0
71V2556S133PFGI Renesas Electronics America	IC SRAM 4.5MBIT PARALLEL 100TQFP	121
71T75802S150PFG Renesas Electronics America	IC SRAM 18MBIT PARALLEL 100TQFP	0
71V2546S150PFG8 Renesas Electronics America	IC SRAM 4.5MBIT PARALLEL 100TQFP	0
70V3319S133BF8 Renesas Electronics America	IC SRAM 4.5MBIT PAR 208CABGA	0
7164S100DB Renesas Electronics America	IC SRAM 64KBIT PARALLEL 28CERDIP	0
70V3579S4BCG Renesas Electronics America	IC SRAM 1.125MBIT PAR 256CABGA	0
7028L20PFGI8 Renesas Electronics America	IC SRAM 1MBIT PARALLEL 100TQFP	0
71V65903S85PFGI8 Renesas Electronics America	IC SRAM 9MBIT PARALLEL 100TQFP	0
70V658S12BFI Renesas Electronics America	IC SRAM 2MBIT PARALLEL 208CABGA	0
UPD46365184BF1-E33-EQ1-A Renesas Electronics America	QDR SRAM, 2MX18, 0.45NS	795
71V3559S80BG8 Renesas Electronics America	IC SRAM 4.5MBIT PARALLEL 119PBGA	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)