Memory

Part Number	Description / PDF	Quantity
6116LA70DB Renesas Electronics America	IC SRAM 16KBIT PARALLEL 24CDIP	0
71V424S10PHG8 Renesas Electronics America	IC SRAM 4MBIT PARALLEL 44TSOP II	0
71V016SA10BFGI Renesas Electronics America	IC SRAM 1MBIT PARALLEL 48FBGA	299
71V35761SA183BGGI8 Renesas Electronics America	IC SRAM 4.5MBIT PARALLEL 119PBGA	0
71V424S12PHG Renesas Electronics America	71V424 - 4 MEG (512K X 8-BIT) 3.	337
70V3569S6BF Renesas Electronics America	IC SRAM 576KBIT PAR 208CABGA	0
71V256SA15YGI Renesas Electronics America	IC SRAM 256KBIT PARALLEL 28SOJ	609
71V65703S80BQGI8 Renesas Electronics America	IC SRAM 9MBIT PARALLEL 165CABGA	0
71V65903S85BQG Renesas Electronics America	IC SRAM 9MBIT PARALLEL 165CABGA	67
R1QDA3618CBG-20IB0 Renesas Electronics America	STANDARD SRAM, 2MX18, 0.45NS	618
71V65903S85BGG Renesas Electronics America	IC SRAM 9MBIT PARALLEL 119PBGA	0
HN58V256ATI12E Renesas Electronics America	256K SERIAL EEPROM	292
71342SA55PF Renesas Electronics America	IC SRAM 32KBIT PARALLEL 64TQFP	26
71V3556SA133BQG8 Renesas Electronics America	IC SRAM 4.5MBIT PAR 165CABGA	0
HN58V256AT12E Renesas Electronics America	256K SERIAL EEPROM (32KWORD X 8	8460
71V424L10YG Renesas Electronics America	IC SRAM 4MBIT PARALLEL 36SOJ	0
71V3577S75BGG Renesas Electronics America	IC SRAM 4.5MBIT PARALLEL 119PBGA	0
71V65703S85BG8 Renesas Electronics America	IC SRAM 9MBIT PARALLEL 119PBGA	0
71V67703S75BQGI8 Renesas Electronics America	IC SRAM 9MBIT PARALLEL 165CABGA	0
71V65803S100BGGI8 Renesas Electronics America	IC SRAM 9MBIT PARALLEL 119PBGA	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)