Memory

Part Number	Description / PDF	Quantity
CY62147G30-45ZSXI IR (Infineon Technologies)	STANDARD SRAM, 256KX16, 45NS, CM	105
CY7C1061G18-15BVXI Cypress Semiconductor	IC SRAM 16MBIT PARALLEL 48VFBGA	0
AT28C256F-15DM/883 Roving Networks / Microchip Technology	IC EEPROM 256KBIT PAR 28CDIP	0
24CW640T-I/CS0668 Roving Networks / Microchip Technology	IC EEPROM 64KBIT I2C 1MHZ 4WLCSP	358
S29GL064N90BFI040 Cypress Semiconductor	IC FLASH 64MBIT PARALLEL 48FBGA	1163
S29GL01GT13DHNV13 Cypress Semiconductor	IC FLASH 1GBIT PARALLEL 64FBGA	0
CY7C1313CV18-250BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	54
93AA66A-I/SN Roving Networks / Microchip Technology	IC EEPROM 4KBIT SPI 2MHZ 8SOIC	1410
M95256-DFMN6TP STMicroelectronics	IC EEPROM 256KBIT SPI 20MHZ 8SO	0
AT27C1024-45JU Roving Networks / Microchip Technology	IC EPROM 1MBIT PARALLEL 44PLCC	410
S25FL128LAGBHV033 Cypress Semiconductor	IC FLASH 128MBIT SPI/QUAD 24BGA	0
71V424S15YG Renesas Electronics America	IC SRAM 4MBIT PARALLEL 36SOJ	2241
CY7C199CN-20ZXI IR (Infineon Technologies)	IC SRAM 256KBIT PAR 28TSOP I	2077
CY14E256LA-SZ45XI IR (Infineon Technologies)	IC NVSRAM 256KBIT PAR 32SOIC	261
GS8662TT20BGD-500I GSI Technology	IC SRAM 72MBIT PARALLEL 165FPBGA	0
IS25LP256D-RHLE ISSI (Integrated Silicon Solution, Inc.)	IC FLSH 256MBIT SPI/QUAD 24TFBGA	0
AS4C128M16D3LC-12BINTR Alliance Memory, Inc.	IC DRAM 2GBIT 800MHZ 96FBGA	0
S29AS008J70BFA043 Cypress Semiconductor	IC FLASH 8MBIT PARALLEL 48FBGA	0
RM25C64C-LMAI-T Adesto Technologies	IC CBRAM 64KBIT SPI 10MHZ 8UDFN	0
SM662PEC BDS TTC29 Silicon Motion	FERRI EMMC 64GB 3D TLC + EXT. TE	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)