Memory

Part Number	Description / PDF	Quantity
CY7C1021CV33-15BAI Rochester Electronics	STANDARD SRAM, 64KX16, 15NS	2064
AT45DB161E-MHF-T Adesto Technologies	IC FLASH 16MBIT SPI 85MHZ 8UDFN	0
25C040XT-I/ST Roving Networks / Microchip Technology	IC EEPROM 4KBIT SPI 3MHZ 8TSSOP	0
BR93G76FVJ-3AGTE2 ROHM Semiconductor	IC EEPROM 8K SPI 3MHZ 8TSSOP	2470
71T75602S150PFG8 Renesas Electronics America	IC SRAM 18MBIT PARALLEL 100TQFP	0
71V124SA20TYI	IC SRAM 1MBIT PARALLEL 32SOJ	0
24LC256-E/SM Roving Networks / Microchip Technology	IC EEPROM 256KBIT I2C 8SOIJ	167
CY7C1041CV33-10BAXI	STANDARD SRAM, 256KX16	0
R1LV0216BSB-5SI#S1 Renesas Electronics America	IC SRAM 2MBIT PARALLEL 44TSOP II	462
AS4C128M16D3C-93BCNTR Alliance Memory, Inc.	IC DRAM 2GBIT 1.066GHZ 96FBGA	0
SST26VF016BT-104I/MF Roving Networks / Microchip Technology	IC FLASH 16MBIT SPI/QUAD 8WDFN	0
CY7C1512AV18-200BZXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	3
IS43TR16640A-125JBLI-TR ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 1GBIT PARALLEL 96TWBGA	0
SST26VF040A-104I/MF Roving Networks / Microchip Technology	IC FLASH 4MBIT SPI/QUAD 8WDFN	784
70V06L15JG8 Renesas Electronics America	IC SRAM 128KBIT PARALLEL 68PLCC	0
AS7C1025B-15JIN Alliance Memory, Inc.	IC SRAM 1MBIT PARALLEL 32SOJ	0
DS1258W-150 Analog Devices, Inc.	IC NVSRAM 2MBIT PARALLEL 40EDIP	64
93C46CT-E/MNY Roving Networks / Microchip Technology	IC EEPROM 1KBIT SPI 3MHZ 8TDFN	0
S29GL128N11FFVR20 Cypress Semiconductor	IC FLASH 128MBIT PARALLEL 64FBGA	0
FT24C16A-USR-T Fremont Micro Devices	IC EEPROM 16KBIT I2C 1MHZ 8SOP	9879

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)