Memory

Part Number	Description / PDF	Quantity
AS7C316096B-10BINTR Alliance Memory, Inc.	IC SRAM 16MBIT PARALLEL 48TFBGA	0
11LC161T-I/TT Roving Networks / Microchip Technology	IC EEPROM 16KBIT SGL WIRE SOT23	0
71024S20TYG Renesas Electronics America	IC SRAM 1MBIT PARALLEL 32SOJ	267
S34MS04G204TFI010 Cypress Semiconductor	IC FLASH 4GBIT PARALLEL 48TSOP I	1512
AS4C64M8D2-25BIN Alliance Memory, Inc.	IC DRAM 512MBIT PARALLEL 60FBGA	2257
71T75802S166BG8 Renesas Electronics America	IC SRAM 18MBIT PARALLEL 119PBGA	0
CY62256LL-70ZRI Rochester Electronics	STANDARD SRAM, 32KX8, 70NS	5974
MX25R1635FM2IH1 Macronix	IC FLSH 16MBIT SPI/QUAD I/O 8SOP	0
71V67703S85BQGI Renesas Electronics America	IC SRAM 9MBIT PARALLEL 165CABGA	0
SFEM4096B1EA1TO-I-GE-111-E02 Swissbit	IC FLASH 16GBIT EMMC 153BGA	0
MT58L256L18F1T-10 Micron Technology	CACHE SRAM 256KX18 10NS PQFP100	0
24LC02BT-E/SN Roving Networks / Microchip Technology	IC EEPROM 2KBIT I2C 400KHZ 8SOIC	4546
MX29GL128EHT2I-90G Macronix	IC FLASH 128MBIT PARALLEL 56TSOP	0
93LC56A/ST Roving Networks / Microchip Technology	IC EEPROM 2KBIT SPI 2MHZ 8TSSOP	0
S29GL128S90DHSS33 Cypress Semiconductor	IC FLASH 128MBIT PARALLEL 64FBGA	0
MX25L6435EMI-10G Macronix	IC FLASH 64MBIT SPI 104MHZ 16SOP	0
S25FL128SDSMFV003 Cypress Semiconductor	IC FLASH 128MBIT SPI/QUAD 16SOIC	0
24LC04BH-E/MS Roving Networks / Microchip Technology	IC EEPROM 4KBIT I2C 400KHZ 8MSOP	0
SST25VF080B-50-4I-QAE-T Roving Networks / Microchip Technology	IC FLASH 8MBIT SPI 50MHZ 8WSON	0
M24128-BWDW6TP STMicroelectronics	IC EEPROM 128KBIT I2C 8TSSOP	3345

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)