Memory

Part Number	Description / PDF	Quantity
AS7C34096A-15TINTR Alliance Memory, Inc.	IC SRAM 4MBIT PARALLEL 44TSOP2	0
GS81282Z36GD-200IV GSI Technology	IC SRAM 144MBIT PAR 165FPBGA	0
BR93A56RFVM-WMTR ROHM Semiconductor	IC EEPROM 2KBIT SPI 2MHZ 8MSOP	3000
24LC024H-I/MS Roving Networks / Microchip Technology	IC EEPROM 2KBIT I2C 1MHZ 8MSOP	1363
CY62126DV30LL-55ZXI Rochester Electronics	STANDARD SRAM, 64KX16, 55NS	607
S29GL064N11FFIS12 Cypress Semiconductor	IC FLASH 64MBIT PARALLEL 64FBGA	0
25LC640-E/SN Roving Networks / Microchip Technology	IC EEPROM 64KBIT SPI 3MHZ 8SOIC	7
CY7C1041CV33-20ZSXEKJ	ASYNC RAM	833
CY7C1308DV25C-167BZCT	IC SRAM 9MBIT PARALLEL 165FBGA	1000
CY7C2565KV18-400BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	89
71V67703S75BQG Renesas Electronics America	IC SRAM 9MBIT PARALLEL 165CABGA	0
71T75602S133PFGI8 Renesas Electronics America	IC SRAM 18MBIT PARALLEL 100TQFP	0
CY7C1308DV25C-167BZC IR (Infineon Technologies)	IC SRAM 9MBIT PARALLEL 165FBGA	100
CY62167G18-55BVXI Cypress Semiconductor	IC SRAM 16MBIT PARALLEL 48VFBGA	0
CY7C1470BV25-200BZXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	563
SST26WF016BAT-104I/SN Roving Networks / Microchip Technology	IC FLASH 16MBIT SPI/QUAD 8SOIC	0
CY62146DV30LL-70ZSXI	STANDARD SRAM, 256KX16, 70NS	2609
W25M02GVZEIT TR Winbond Electronics Corporation	IC FLASH 2GBIT SPI 104MHZ 8WSON	0
71V3576S150PFI	IC SRAM 4.5MBIT PARALLEL 100TQFP	0
CAT25080YI-GT3 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 8KBIT SPI 20MHZ 8TSSOP	21358

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)