Transistors - JFETs

Image Part Number Description / PDF Quantity Rfq
J111,126

J111,126

NXP Semiconductors

JFET N-CH 40V 400MW TO92-3

0

PMBF4391,215

PMBF4391,215

NXP Semiconductors

JFET N-CH 40V 250MW SOT23

31121

PMBFJ112,215

PMBFJ112,215

NXP Semiconductors

PMBFJ112 - N-CHANNEL FET

0

PMBF4393,215

PMBF4393,215

NXP Semiconductors

JFET N-CH 40V 250MW SOT23

0

PMBFJ176,215

PMBFJ176,215

NXP Semiconductors

SMALL SIGNAL P-CHANNEL MOSFET

37032

PMBFJ620,115

PMBFJ620,115

NXP Semiconductors

PMBFJ620 - DUAL N-CHANNEL FET

22226

PMBFJ309,215

PMBFJ309,215

NXP Semiconductors

JFET N-CH 25V 250MW SOT23

0

J112,126

J112,126

NXP Semiconductors

SMALL SIGNAL N-CHANNEL MOSFET

0

J110,126

J110,126

NXP Semiconductors

JFET N-CH 25V 0.4W SOT54

0

PMBFJ174,215

PMBFJ174,215

NXP Semiconductors

JFET P-CH 30V 0.3W SOT23

0

BSR57,215

BSR57,215

NXP Semiconductors

JFET N-CH 40V 250MW SOT23

0

J109,126

J109,126

NXP Semiconductors

JFET N-CH 25V 0.4W SOT54

0

BFR31,215

BFR31,215

NXP Semiconductors

JFET N-CH 10MA 250MW SOT23

0

J175,116

J175,116

NXP Semiconductors

JFET P-CH 30V 0.4W TO92

0

PMBFJ108,215

PMBFJ108,215

NXP Semiconductors

JFET N-CH 25V 250MW SOT23

0

BFR30,215

BFR30,215

NXP Semiconductors

JFET N-CH 10MA 250MW SOT23

0

J108,126

J108,126

NXP Semiconductors

JFET N-CH 25V 0.4W SOT54

0

J177,126

J177,126

NXP Semiconductors

JFET P-CH 30V 400MW TO92-3

0

J113,126

J113,126

NXP Semiconductors

JFET N-CH 40V 400MW TO92-3

0

BFR31,235

BFR31,235

NXP Semiconductors

JFET N-CH 10MA 250MW SOT23

0

Transistors - JFETs

1. Overview

Junction Field-Effect Transistors (JFETs) are three-terminal voltage-controlled semiconductor devices that regulate current flow through a conductive channel. As the first type of field-effect transistor, JFETs are characterized by high input impedance, low noise, and excellent analog signal handling capabilities. They play critical roles in modern electronics for signal amplification, switching, and impedance matching applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
N-channel JFETHigher electron mobility, faster operationAudio amplifiers, RF mixers
P-channel JFETComplementary to N-channel, lower speedPower switching, analog switches
Dual-gate JFETTwo control gates for improved linearityTV tuners, communication systems
High-frequency JFETOptimized for GHz-range performanceRF amplifiers, microwave circuits

3. Structure and Composition

JFETs consist of a semiconductor channel (typically silicon or GaAs) with source and drain contacts at each end. A reverse-biased p-n junction gate controls the channel width. Key structural elements include: - Channel: Determines current capacity and transconductance - Gate: Forms depletion region to modulate channel conductivity - Metallization layers: Provide low-resistance contacts - Passivation layer: Protects device surface from contamination

4. Key Technical Specifications

ParameterDescriptionImportance
VGS(off)Gate-source cutoff voltageDetermines operating voltage range
IDSSSaturation drain currentDefines maximum current capability
gmTransconductanceMeasures amplification efficiency
RDS(on)On-state resistanceImpacts power dissipation
fTTransition frequencyLimits high-frequency performance

5. Application Fields

Major industries utilizing JFETs include: - Audio equipment: Guitar amplifiers, microphone preamps - Test & measurement: Oscilloscopes, signal analyzers - Industrial control: Sensor interfaces, process control - Medical devices: ECG machines, diagnostic equipment - Communication systems: RF front-ends, satellite receivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
TI (Texas Instruments)J111General-purpose N-channel JFET
ON Semiconductor2N5457High-voltage switching applications
Infineon TechnologiesBF862Low-noise RF amplifier JFET
STMicroelectronicsSTJ105Power JFET for industrial systems

7. Selection Guidelines

Consider the following factors when selecting JFETs: - Application type: Audio (low noise), switching (high IDSS), or RF (high fT) - Operating conditions: Temperature range, voltage requirements - Package type: Through-hole for prototyping vs. surface-mount for mass production - Cost vs performance: Balance between specifications and budget constraints

8. Industry Trends

Emerging trends shaping JFET development include: - Development of wide-bandgap JFETs using SiC/GaN for high-power applications - Integration with CMOS technology for mixed-signal systems - Miniaturization for portable electronics - Enhanced radiation-hardened variants for aerospace applications - Growing adoption in bio-sensing and IoT edge devices

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