Transistors - JFETs

Image Part Number Description / PDF Quantity Rfq
PMBFJ109,215

PMBFJ109,215

NXP Semiconductors

JFET N-CH 25V 250MW SOT23

0

J176,126

J176,126

NXP Semiconductors

JFET P-CH 30V 400MW TO92-3

0

PMBFJ177,215

PMBFJ177,215

NXP Semiconductors

JFET P-CH 30V 0.3W SOT23

0

PMBFJ175,215

PMBFJ175,215

NXP Semiconductors

JFET P-CH 30V 0.3W SOT23

0

J174,126

J174,126

NXP Semiconductors

JFET P-CH 30V 400MW TO92-3

0

BSR58,215

BSR58,215

NXP Semiconductors

JFET N-CH 40V 250MW SOT23

0

PMBFJ110,215

PMBFJ110,215

NXP Semiconductors

PMBFJ110 - N-CHANNEL FET

0

PMBFJ113,215

PMBFJ113,215

NXP Semiconductors

JFET N-CH 40V 0.3W SOT23

0

PMBFJ308,215

PMBFJ308,215

NXP Semiconductors

JFET N-CH 25V 250MW SOT23

0

BFR30,235

BFR30,235

NXP Semiconductors

JFET N-CH 10MA 250MW SOT23

0

BSR56,215

BSR56,215

NXP Semiconductors

JFET N-CH 40V 0.25W SOT23

0

PMBF4392,215

PMBF4392,215

NXP Semiconductors

SMALL SIGNAL FIELD-EFFECT TRANSI

0

PMBFJ111,215

PMBFJ111,215

NXP Semiconductors

JFET N-CH 40V 0.3W SOT23

0

PMBFJ310,215

PMBFJ310,215

NXP Semiconductors

JFET N-CH 25V 250MW SOT23

0

BFT46,215

BFT46,215

NXP Semiconductors

JFET N-CH 10MA 250MW SOT23

0

J3A012YXS/T0BY4551

J3A012YXS/T0BY4551

NXP Semiconductors

TRANSISTOR JFET 8PLLCC

0

J2A020YXS/T0BY425,

J2A020YXS/T0BY425,

NXP Semiconductors

TRANSISTOR JFET 8PLLCC

0

J3A081GUA/T1AG8VYV

J3A081GUA/T1AG8VYV

NXP Semiconductors

TRANSISTOR JFET

0

J5A080GHN/T0BG208Z

J5A080GHN/T0BG208Z

NXP Semiconductors

TRANSISTOR JFET

0

J3E145GXS/S0BGCA5J

J3E145GXS/S0BGCA5J

NXP Semiconductors

TRANSISTOR JFET

0

Transistors - JFETs

1. Overview

Junction Field-Effect Transistors (JFETs) are three-terminal voltage-controlled semiconductor devices that regulate current flow through a conductive channel. As the first type of field-effect transistor, JFETs are characterized by high input impedance, low noise, and excellent analog signal handling capabilities. They play critical roles in modern electronics for signal amplification, switching, and impedance matching applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
N-channel JFETHigher electron mobility, faster operationAudio amplifiers, RF mixers
P-channel JFETComplementary to N-channel, lower speedPower switching, analog switches
Dual-gate JFETTwo control gates for improved linearityTV tuners, communication systems
High-frequency JFETOptimized for GHz-range performanceRF amplifiers, microwave circuits

3. Structure and Composition

JFETs consist of a semiconductor channel (typically silicon or GaAs) with source and drain contacts at each end. A reverse-biased p-n junction gate controls the channel width. Key structural elements include: - Channel: Determines current capacity and transconductance - Gate: Forms depletion region to modulate channel conductivity - Metallization layers: Provide low-resistance contacts - Passivation layer: Protects device surface from contamination

4. Key Technical Specifications

ParameterDescriptionImportance
VGS(off)Gate-source cutoff voltageDetermines operating voltage range
IDSSSaturation drain currentDefines maximum current capability
gmTransconductanceMeasures amplification efficiency
RDS(on)On-state resistanceImpacts power dissipation
fTTransition frequencyLimits high-frequency performance

5. Application Fields

Major industries utilizing JFETs include: - Audio equipment: Guitar amplifiers, microphone preamps - Test & measurement: Oscilloscopes, signal analyzers - Industrial control: Sensor interfaces, process control - Medical devices: ECG machines, diagnostic equipment - Communication systems: RF front-ends, satellite receivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
TI (Texas Instruments)J111General-purpose N-channel JFET
ON Semiconductor2N5457High-voltage switching applications
Infineon TechnologiesBF862Low-noise RF amplifier JFET
STMicroelectronicsSTJ105Power JFET for industrial systems

7. Selection Guidelines

Consider the following factors when selecting JFETs: - Application type: Audio (low noise), switching (high IDSS), or RF (high fT) - Operating conditions: Temperature range, voltage requirements - Package type: Through-hole for prototyping vs. surface-mount for mass production - Cost vs performance: Balance between specifications and budget constraints

8. Industry Trends

Emerging trends shaping JFET development include: - Development of wide-bandgap JFETs using SiC/GaN for high-power applications - Integration with CMOS technology for mixed-signal systems - Miniaturization for portable electronics - Enhanced radiation-hardened variants for aerospace applications - Growing adoption in bio-sensing and IoT edge devices

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