PMBFJ112,215

Manufacturer Part PMBFJ112,215
Manufacturer NXP Semiconductors
Description PMBFJ112 - N-CHANNEL FET
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet PMBFJ112,215 PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 07 - Dec 11 2025
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Product Attributes
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:N-Channel
Voltage - Breakdown (V(BR)GSS):40 V
Drain to Source Voltage (Vdss):40 V
Current - Drain (Idss) @ Vds (Vgs=0):5 mA @ 15 V
Current Drain (Id) - Max:-
Voltage - Cutoff (VGS off) @ Id:5 V @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds:6pF @ 10V (VGS)
Resistance - RDS(On):50 Ohms
Power - Max:300 mW
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23 (TO-236AB)
More Information
PMBFJ112,215
PMBFJ112,215
NXP Semiconductors PMBFJ112,215 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
PMBFJ112,215 PDF
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