Transistors - JFETs

Image Part Number Description / PDF Quantity Rfq
NSVJ6904DSB6T1G

NSVJ6904DSB6T1G

Sanyo Semiconductor/ON Semiconductor

JFET -25V, 20 TO 40MA DUA

268457000

TF256TH-3-TL-H

TF256TH-3-TL-H

SMALL SIGNAL FET

45863

TF218THC-5-TL-H-SY

TF218THC-5-TL-H-SY

Sanyo Denki SanUPS Products

N CHANNEL SILICON JFET FOR ELECT

40000

LSK389B SOIC 8L

LSK389B SOIC 8L

Linear Integrated Systems, Inc.

LOW NOISE, MONOLITHIC DUAL, N-CH

20494

176DFN 8L

176DFN 8L

Linear Integrated Systems, Inc.

P-CHANNEL, SINGLE, JFET SWITCH

100

LS320 DIE

LS320 DIE

Linear Integrated Systems, Inc.

BIFET AMPLIFIER - HIGH INPUT Z A

400

SMMBF4391LT1G

SMMBF4391LT1G

SMALL SIGNAL N-CHANNEL JFET

63000

TF256TH-4-TL-H

TF256TH-4-TL-H

SMALL SIGNAL FET

182200

J113

J113

Sanyo Semiconductor/ON Semiconductor

JFET N-CH 35V 625MW TO92-3

9990

PN5432

PN5432

SMALL SIGNAL N-CHANNEL MOSFET

12651

NSVJ5908DSG5T1G

NSVJ5908DSG5T1G

Sanyo Semiconductor/ON Semiconductor

NCH+NCH J-FET

0

MMBFJ177LT1G

MMBFJ177LT1G

SMALL SIGNAL FIELD-EFFECT TRANSI

303027

MMBF4392

MMBF4392

SMALL SIGNAL FIELD-EFFECT TRANSI

278

4391DFN 8L

4391DFN 8L

Linear Integrated Systems, Inc.

LOW NOISE, N-CHANNEL JFET SWITCH

12285

CPH6904-TL-E

CPH6904-TL-E

Sanyo Semiconductor/ON Semiconductor

JFET 2N-CH 0.7W CPH6

471

J112RL1

J112RL1

SMALL SIGNAL N-CHANNEL MOSFET

2000

NTE460

NTE460

NTE Electronics, Inc.

JFET-P-CH AF AMP

456

UJ3N120035K3S

UJ3N120035K3S

UnitedSiC

1200V 35 MOHM SIC JFET, G3, N-ON

355

J105

J105

SMALL SIGNAL FIELD-EFFECT TRANSI

365

2SK2394-6-TB-E

2SK2394-6-TB-E

Sanyo Semiconductor/ON Semiconductor

JFET N-CH 50MA 200MW 3CP

3298

Transistors - JFETs

1. Overview

Junction Field-Effect Transistors (JFETs) are three-terminal voltage-controlled semiconductor devices that regulate current flow through a conductive channel. As the first type of field-effect transistor, JFETs are characterized by high input impedance, low noise, and excellent analog signal handling capabilities. They play critical roles in modern electronics for signal amplification, switching, and impedance matching applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
N-channel JFETHigher electron mobility, faster operationAudio amplifiers, RF mixers
P-channel JFETComplementary to N-channel, lower speedPower switching, analog switches
Dual-gate JFETTwo control gates for improved linearityTV tuners, communication systems
High-frequency JFETOptimized for GHz-range performanceRF amplifiers, microwave circuits

3. Structure and Composition

JFETs consist of a semiconductor channel (typically silicon or GaAs) with source and drain contacts at each end. A reverse-biased p-n junction gate controls the channel width. Key structural elements include: - Channel: Determines current capacity and transconductance - Gate: Forms depletion region to modulate channel conductivity - Metallization layers: Provide low-resistance contacts - Passivation layer: Protects device surface from contamination

4. Key Technical Specifications

ParameterDescriptionImportance
VGS(off)Gate-source cutoff voltageDetermines operating voltage range
IDSSSaturation drain currentDefines maximum current capability
gmTransconductanceMeasures amplification efficiency
RDS(on)On-state resistanceImpacts power dissipation
fTTransition frequencyLimits high-frequency performance

5. Application Fields

Major industries utilizing JFETs include: - Audio equipment: Guitar amplifiers, microphone preamps - Test & measurement: Oscilloscopes, signal analyzers - Industrial control: Sensor interfaces, process control - Medical devices: ECG machines, diagnostic equipment - Communication systems: RF front-ends, satellite receivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
TI (Texas Instruments)J111General-purpose N-channel JFET
ON Semiconductor2N5457High-voltage switching applications
Infineon TechnologiesBF862Low-noise RF amplifier JFET
STMicroelectronicsSTJ105Power JFET for industrial systems

7. Selection Guidelines

Consider the following factors when selecting JFETs: - Application type: Audio (low noise), switching (high IDSS), or RF (high fT) - Operating conditions: Temperature range, voltage requirements - Package type: Through-hole for prototyping vs. surface-mount for mass production - Cost vs performance: Balance between specifications and budget constraints

8. Industry Trends

Emerging trends shaping JFET development include: - Development of wide-bandgap JFETs using SiC/GaN for high-power applications - Integration with CMOS technology for mixed-signal systems - Miniaturization for portable electronics - Enhanced radiation-hardened variants for aerospace applications - Growing adoption in bio-sensing and IoT edge devices

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