Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
APTGF50H60T3G

APTGF50H60T3G

Roving Networks / Microchip Technology

IGBT MODULE 600V 65A 250W SP3

0

APTGF150A60T3AG

APTGF150A60T3AG

Roving Networks / Microchip Technology

IGBT MODULE 600V 230A 833W SP3

0

CMSDC60H19B3G

CMSDC60H19B3G

Roving Networks / Microchip Technology

IC POWER MODULE SMD

0

APTGF150DH120G

APTGF150DH120G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 200A 961W SP6

0

APTGF50H60T1G

APTGF50H60T1G

Roving Networks / Microchip Technology

IGBT MODULE 600V 65A 250W SP1

0

CMSDDF40H60T1G

CMSDDF40H60T1G

Roving Networks / Microchip Technology

IC POWER MODULE SMD

0

CMAVC60VRM99T3AMG

CMAVC60VRM99T3AMG

Roving Networks / Microchip Technology

IC POWER MODULE SMD

0

APTGF50DH120T3G

APTGF50DH120T3G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 70A 312W SP3

0

CMLRGF60V601AMXG-AS

CMLRGF60V601AMXG-AS

Roving Networks / Microchip Technology

IC POWER MODULE SMD

0

APTGF25H120T3G

APTGF25H120T3G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 40A 208W SP3

0

CMLRGLQ80V601AMXG-AS

CMLRGLQ80V601AMXG-AS

Roving Networks / Microchip Technology

IC POWER MODULE SMD

0

APTGF90A60TG

APTGF90A60TG

Roving Networks / Microchip Technology

IGBT MODULE 600V 110A 416W SP4

0

APTGF50DDA60T3G

APTGF50DDA60T3G

Roving Networks / Microchip Technology

IGBT MODULE 600V 65A 250W SP3

0

APTGF300SK120G

APTGF300SK120G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 400A 1780W SP6

0

CMTDGF50H603G

CMTDGF50H603G

Roving Networks / Microchip Technology

IC POWER MODULE SMD

0

APTGF50DSK120T3G

APTGF50DSK120T3G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 70A 312W SP3

0

APTGF180A60TG

APTGF180A60TG

Roving Networks / Microchip Technology

IGBT MODULE 600V 220A 833W SP4

0

CMTDGF90H603G

CMTDGF90H603G

Roving Networks / Microchip Technology

IC POWER MODULE SMD

0

APTGF180SK60TG

APTGF180SK60TG

Roving Networks / Microchip Technology

IGBT MODULE 600V 220A 833W SP4

0

CMLOGU50H60T3FG

CMLOGU50H60T3FG

Roving Networks / Microchip Technology

IC POWER MODULE SMD

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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