Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
APTGT30TL601G

APTGT30TL601G

Roving Networks / Microchip Technology

IGBT MODULE 600V 50A 90W SP1

0

APTGT400A120G

APTGT400A120G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 560A 1785W SP6

0

APTGT75H120TG

APTGT75H120TG

Roving Networks / Microchip Technology

IGBT MODULE 1200V 110A 357W SP4

0

APTGT30H60T1G

APTGT30H60T1G

Roving Networks / Microchip Technology

IGBT MODULE 600V 50A 90W SP1

0

APTGLQ40HR120CT3G

APTGLQ40HR120CT3G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 75A 250W SP3

0

APTGT50DH60T1G

APTGT50DH60T1G

Roving Networks / Microchip Technology

IGBT MODULE 600V 80A 176W SP1

0

APTGT100H170G

APTGT100H170G

Roving Networks / Microchip Technology

IGBT MODULE 1700V 150A 560W SP6

0

APTGT30X60T3G

APTGT30X60T3G

Roving Networks / Microchip Technology

IGBT MODULE 600V 50A 90W SP3

0

APTGT300DA60G

APTGT300DA60G

Roving Networks / Microchip Technology

IGBT MODULE 600V 430A 1150W SP6

0

APTGLQ600A65T6G

APTGLQ600A65T6G

Roving Networks / Microchip Technology

IGBT MODULE 650V 1200A 2000W SP6

0

APTGLQ30H65T3G

APTGLQ30H65T3G

Roving Networks / Microchip Technology

IGBT MODULE 650V 40A 95W

0

APTGT75H60T3G

APTGT75H60T3G

Roving Networks / Microchip Technology

IGBT MODULE 600V 100A 250W SP3

0

APTGT75DU120TG

APTGT75DU120TG

Roving Networks / Microchip Technology

IGBT MODULE 1200V 100A 350W SP4

0

APTGL90DSK120T3G

APTGL90DSK120T3G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 110A 385W SP3

0

APTGT50DA120TG

APTGT50DA120TG

Roving Networks / Microchip Technology

IGBT MODULE 1200V 75A 277W SP4

0

APTCV60TLM24T3G

APTCV60TLM24T3G

Roving Networks / Microchip Technology

IGBT MODULE 600V 100A 250W SP3

0

APTGT25X120T3G

APTGT25X120T3G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 40A 156W SP3

0

APTGT225SK170G

APTGT225SK170G

Roving Networks / Microchip Technology

IGBT MODULE 1700V 340A 1250W SP6

0

APTGTQ200A65T3G

APTGTQ200A65T3G

Roving Networks / Microchip Technology

IGBT MODULE 650V 200A 483W SP3F

0

APTGT300DA60D3G

APTGT300DA60D3G

Roving Networks / Microchip Technology

IGBT MODULE 600V 400A 940W D3

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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