Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
APTGF75DSK120TG

APTGF75DSK120TG

Roving Networks / Microchip Technology

IGBT MODULE 1200V 100A 500W SP4

0

APTGF500U60D4G

APTGF500U60D4G

Roving Networks / Microchip Technology

IGBT MODULE 600V 625A 2000W D4

0

APT50GT120JU2

APT50GT120JU2

Roving Networks / Microchip Technology

IGBT MOD 1200V 75A 347W SOT227

0

APTGF350A60G

APTGF350A60G

Roving Networks / Microchip Technology

IGBT MODULE 600V 430A 1562W SP6

0

APT60GF60JU2

APT60GF60JU2

Roving Networks / Microchip Technology

IGBT MODULE 600V 93A 378W SOT227

0

APT50GT120JRDQ2

APT50GT120JRDQ2

Roving Networks / Microchip Technology

IGBT MOD 1200V 72A 379W ISOTOP

0

APTGF180H60G

APTGF180H60G

Roving Networks / Microchip Technology

IGBT MODULE 600V 220A 833W SP6

0

APT30GF60JU2

APT30GF60JU2

Roving Networks / Microchip Technology

IGBT MODULE 600V 58A 192W SOT227

0

APTGF100A120TG

APTGF100A120TG

Roving Networks / Microchip Technology

IGBT MODULE 1200V 135A 568W SP4

0

APTGF100DA120T1G

APTGF100DA120T1G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 130A 735W SP1

0

APTGF90A60T1G

APTGF90A60T1G

Roving Networks / Microchip Technology

IGBT MODULE 600V 110A 416W SP1

0

APTGF100DA120TG

APTGF100DA120TG

Roving Networks / Microchip Technology

IGBT MODULE 1200V 135A 568W SP4

0

APT60GF60JU3

APT60GF60JU3

Roving Networks / Microchip Technology

IGBT MODULE 600V 93A 378W SOT227

0

APT30GF60JU3

APT30GF60JU3

Roving Networks / Microchip Technology

IGBT MODULE 600V 58A 192W ISOTOP

0

APT60GT60JR

APT60GT60JR

Roving Networks / Microchip Technology

IGBT MODULE 600V 93A 378W ISOTOP

0

APTGF150H120G

APTGF150H120G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 200A 961W SP6

0

APTGF90H60T3G

APTGF90H60T3G

Roving Networks / Microchip Technology

IGBT MODULE 600V 120A 416W SP3

0

APTGF300U120DG

APTGF300U120DG

Roving Networks / Microchip Technology

IGBT MODULE 1200V 400A 1780W SP6

0

APT100GF60JU2

APT100GF60JU2

Roving Networks / Microchip Technology

IGBT MOD 600V 120A 416W SOT227

0

APT100GF60JU3

APT100GF60JU3

Roving Networks / Microchip Technology

IGBT MOD 600V 120A 416W SOT227

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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