Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
2SK3892 Panasonic	MOSFET N-CH 200V 22A TO220D-A1	93
2SK327700L Panasonic	MOSFET N-CH 200V 2.5A U-G1	5808
SK8603140L Panasonic	MOSFET N-CH 30V 25A 8HSO	2940
SK8603180L Panasonic	MOSFET N-CH 30V 15A/39A 8HSO	2844
FK8V03040L Panasonic	MOSFET N CH 33V 10A WMINI8-F1	2720
FK8V03060L Panasonic	MOSFET N CH 33V 6.5A WMINI8	0
FJ3303010L Panasonic	MOSFET P-CH 30V 100MA SSSMINI3	0
FK3303010L Panasonic	MOSFET N-CH 30V 100MA SSSMINI3	24589
FK8V03030L Panasonic	MOSFET N CH 33V 12A WMINI8	0
FK3503010L Panasonic	MOSFET N-CH 30V 100MA SMINI3	12015
MTM861270LBF Panasonic	MOSFET P-CH 20V 2A WSSMINI6-F1	0
FJ4B01120L1 Panasonic	MOSFET P-CH 12V 2.6A ULGA004	1215
SK8403180L Panasonic	MOSFET N-CH 30V 12A 8HSSO	3000
FK3P02110L Panasonic	MOSFET N CH 24V 3A PMCP	5663
FK4B01120L1 Panasonic	MOSFET N-CH 12V 3.9A ULGA004	980
FM6L52020L Panasonic	MOSFET N-CH 20V 2.2A WSSMINI6-F1	0
FL6L52030L Panasonic	MOSFET P-CH 20V 1A WSSMINI6-F1	0
FL6L52010L Panasonic	MOSFET P-CH 20V 2A WSSMINI6-F1	0
FM6K62010L Panasonic	MOSFET N-CH 20V 2A WSMINI6	0
2SK3546G0L Panasonic	MOSFET N-CH 50V 100MA SMINI3-F2	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS