Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
FJ4B01100L1 Panasonic	MOSFET P-CH 12V 2.2A XLGA004	2284
MTM861280LBF Panasonic	MOSFET P-CH 20V 1A WSSMINI6-F1	0
FK6K02010L Panasonic	MOSFET N-CH 20V 4.5A WSMINI6	3000
FJ3P02100L Panasonic	MOSFET P-CH 20V 4.4A 3PMCP	6552
FJ4B01110L1 Panasonic	MOSFET P-CH 12V 1.4A ALGA004	1845
2SK3045 Panasonic	MOSFET N-CH 500V 2.5A TO220D-A1	218
MTM231232LBF Panasonic	MOSFET P-CH 20V 3A SMINI3-G1-B	340
MTM981400BBF Panasonic	MOSFET P-CH 40V 7A SO8-F1-B	1581
FK8V03050L Panasonic	MOSFET N CH 33V 8A WMINI8-F1	2351
FK4B01110L1 Panasonic	MOSFET N-CH 12V 2.3A ALGA004	1957
MTM761110LBF Panasonic	MOSFET P-CH 12V 4A WSMINI6	2709
MTM982400BBF Panasonic	MOSFET N-CH 40V 7A SO8-F1-B	2247
MTM761100LBF Panasonic	MOSFET P-CH 12V 4A WSMINI6	2733
2SK303100L Panasonic	MOSFET N-CH 100V 15A U-G1	5574
FK3906010L Panasonic	MOSFET N-CH 60V 100MA SSMINI3	0
2SK3046 Panasonic	MOSFET N-CH 500V 7A TO220D-A1	291
2SK326800L Panasonic	MOSFET N-CH 100V 15A U-DL	1139
FL5252050R Panasonic	MOSFET P-CH 20V 2.1A MINI5-G3-B	0
FJ6K01010L Panasonic	MOSFET P-CH 12V 4A WSMINI6	570
MTM232270LBF Panasonic	MOSFET N CH 20V 2A SMINI3-G1-B	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS