Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
MTMF82310BBF Panasonic	MOSFET N-CH 30V 18A SO8-F1-B	5410
FK3306010L Panasonic	MOSFET N-CH 60V 100MA SSSMINI3	28609
SK8603150L Panasonic	MOSFET N-CH 30V 26A/89A 8HSO	3000
2SK3043 Panasonic	MOSFET N-CH 450V 5A TO220D-A1	256
2SK3048 Panasonic	MOSFET N-CH 600V 3A TO220D-A1	110
SK8403170L Panasonic	MOSFET N-CH 30V 16A 8HSSO	2447
FK3506010L Panasonic	MOSFET N-CH 60V 100MA SMINI3	7244
SK8403160L Panasonic	MOSFET N-CH 30V 18A 8HSSO	2994
FK8V03020L Panasonic	MOSFET N CH 33V 14A WMINI8	0
2SK3064G0L Panasonic	MOSFET N-CH 30V 100MA SMINI3-F2	211
XN0NE9200L Panasonic	MOSFET P-CH 12V 1.2A MINI5-G1	4751
FK4B01100L1 Panasonic	MOSFET N-CH 12V 3.4A XLGA004	1975
SK830321KL Panasonic	MOSFET N-CH 30V 7A/18A 8HSSO	4981
2SK303000L Panasonic	MOSFET N-CH 100V 8A U-G1	5542
MTM862270LBF Panasonic	MOSFET N-CH 20V 2.2A WSSMINI6-F1	977
SK8603170L Panasonic	MOSFET N-CH 30V 20A/59A 8HSO	3000
2SK302500L Panasonic	MOSFET N-CH 60V 30A U-DL	5707
MTM761230LBF Panasonic	MOSFET P-CH 20V 3A WSMINI6	722
SK8403190L Panasonic	MOSFET N-CH 30V 10A 8HSSO	2369
SK8603160L Panasonic	MOSFET N-CH 30V 22A/70A 8HSO	2966

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS