Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
PSMN1R8-30PL,127 Nexperia	MOSFET N-CH 30V 100A TO220AB	9421
PMXB56ENZ Nexperia	30 V, N-CHANNEL TRENCH MOSFET	0
BUK761R7-40E,118 Nexperia	MOSFET N-CH 40V 120A D2PAK	40
PSMN2R7-30BL,118 Nexperia	MOSFET N-CH 30V 100A D2PAK	25
BUK9606-40B,118 Nexperia	MOSFET N-CH 40V 75A D2PAK	0
PMCM4401VPEZ Nexperia	MOSFET P-CH 12V 3.9A 4WLCSP	928
BUK7535-100A,127 Nexperia	MOSFET N-CH 100V 41A TO220AB	8000
BUK9M12-60EX Nexperia	MOSFET N-CH 60V 54A LFPAK33	2299
PMZ290UNE2YL Nexperia	MOSFET N-CH 20V 1.2A DFN1006-3	0
PMN48XPAX Nexperia	MOSFET P-CH 20V 4.1A 6TSOP	24000
PMV27UPEAR Nexperia	MOSFET P-CH 20V 4.5A TO236AB	0
BUK9Y11-30B,115 Nexperia	MOSFET N-CH 30V 59A LFPAK56	140
BSH205G2VL Nexperia	MOSFET P-CH 20V 2.3A TO236AB	0
PMPB100ENEX Nexperia	MOSFET DFN2020MD-6	2300
PSMN6R3-120PS Nexperia	MOSFET N-CH 120V 70A TO220AB	3423
PMPB15XP,115 Nexperia	MOSFET P-CH 12V 8.2A DFN2020MD-6	0
PSMN063-150D,118 Nexperia	MOSFET N-CH 150V 29A DPAK	325
PSMN4R1-60YLX Nexperia	MOSFET N-CH 60V 100A LFPAK56	0
2N7002P,235 Nexperia	MOSFET N-CH 60V 360MA TO236AB	261101
BUK9M6R0-40HX Nexperia	MOSFET N-CH 40V 50A LFPAK33	1834

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS