Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
PSMN4R3-100PS,127 Nexperia	MOSFET N-CH 100V 120A TO220AB	14
PMFPB8032XP,115 Nexperia	MOSFET P-CH 20V 2.7A HUSON6	3374
NX3008PBKVL Nexperia	MOSFET P-CH 30V 230MA TO236AB	0
NX7002BKR Nexperia	MOSFET N-CH 60V 270MA TO236AB	12095
PSMN2R1-40PLQ Nexperia	MOSFET N-CH 40V 150A TO220AB	0
BSP89,115 Nexperia	MOSFET N-CH 240V 375MA SOT223	12916
BUK98150-55A/CUF Nexperia	MOSFET N-CH 55V 5.5A SOT223	11667
BUK664R6-40C,118 Nexperia	PFET, 80A I(D), 40V, 0.0046OHM,	3800
PSMN038-100YLX Nexperia	MOSFET N-CH 100V 30A LFPAK56	0
PSMN011-80YS,115 Nexperia	MOSFET N-CH 80V 67A LFPAK56	0
PSMN015-60PS,127 Nexperia	MOSFET N-CH 60V 50A TO220AB	4689
BUK6607-55C,118 Nexperia	MOSFET N-CH 55V 100A D2PAK	37
PHD101NQ03LT,118 Nexperia	POWER FIELD-EFFECT TRANSISTOR, 7	4000
BUK9M28-80EX Nexperia	MOSFET N-CH 80V 33A LFPAK33	0
PSMN3R5-30YL,115 Nexperia	MOSFET N-CH 30V 100A LFPAK56	3578
BSS123,215 Nexperia	MOSFET N-CH 100V 150MA TO236AB	227701
PSMN1R5-40ES,127 Nexperia	POWER FIELD-EFFECT TRANSISTOR, 1	8595
BUK954R2-55B,127 Nexperia	MOSFET N-CH 55V 75A TO220AB	9900
PSMN0R9-30YLDX Nexperia	MOSFET N-CH 30V 300A LFPAK56	0
PMN25ENEX Nexperia	MOSFET N-CH 30V 6.1A 6TSOP	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS