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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
SI3415B-TP

SI3415B-TP

Micro Commercial Components (MCC)

P-CHANNEL MOSFET, SOT-23

0
MCQ4407B-TP

MCQ4407B-TP

Micro Commercial Components (MCC)

MOSFET P-CH 30V 12A 8SOP

3993
MCAC90N04-TP

MCAC90N04-TP

Micro Commercial Components (MCC)

N-CHANNEL MOSFET, DFN5060

0
MCAC150N03A-TP

MCAC150N03A-TP

Micro Commercial Components (MCC)

N-CHANNEL MOSFET, DFN5060

0
MCTL300N10Y-TP

MCTL300N10Y-TP

Micro Commercial Components (MCC)

MOSFET N-CH 100V 300A TOLL-8L

0
MCG50N03-TP

MCG50N03-TP

Micro Commercial Components (MCC)

MOSFET N-CH 30V 50A DFN3333

5000
MCQ05P10Y-TP

MCQ05P10Y-TP

Micro Commercial Components (MCC)

P-CHANNEL MOSFET, SOP-8

0
MCG20N04-TP

MCG20N04-TP

Micro Commercial Components (MCC)

MOSFET N-CH 40V 20A DFN3333-8

4904
MCP60P06-BP

MCP60P06-BP

Micro Commercial Components (MCC)

P-CHANNEL MOSFET, TO-220AB(H) PA

5000
MCG30N03A-TP

MCG30N03A-TP

Micro Commercial Components (MCC)

MOSFET N-CH 30V 30A DFN3333

4900
MCAC90N10Y-TP

MCAC90N10Y-TP

Micro Commercial Components (MCC)

N-CHANNEL MOSFET, DFN5060

0
MCAC68N03Y-TP

MCAC68N03Y-TP

Micro Commercial Components (MCC)

N-CHANNEL MOSFET, DFN5060

0
MCAC40N10YA-TP

MCAC40N10YA-TP

Micro Commercial Components (MCC)

MOSFET N-CH 100V 40A DFN5060

0
MCQ4406A-TP

MCQ4406A-TP

Micro Commercial Components (MCC)

MOSFET N-CH 30V 12A 8SOP

3372
SIL03N10-TP

SIL03N10-TP

Micro Commercial Components (MCC)

MOSFET N-CH 100V 3A SOT23-6L

2900
MCG30N03-TP

MCG30N03-TP

Micro Commercial Components (MCC)

MOSFET N-CH 30V 30A DFN3030

29780
SI3420-TP

SI3420-TP

Micro Commercial Components (MCC)

MOSFET N-CHANNEL 20V 6A SOT23

0
BSS138KT-TP

BSS138KT-TP

Micro Commercial Components (MCC)

N-CHANNEL MOSFET, SOT-523

0
MCAC100N03Y-TP

MCAC100N03Y-TP

Micro Commercial Components (MCC)

N-CHANNEL MOSFET, DFN5060

0
MCG16N15-TP

MCG16N15-TP

Micro Commercial Components (MCC)

MOSFET N-CH 150V 16A DFN3333

4990

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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