Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
MCB90N12-TP Micro Commercial Components (MCC)	N-CHANNEL MOSFET, D2-PAK	0
MCM1567-TP Micro Commercial Components (MCC)	MOSFET P-CH 20V 9A DFN2020-6J	0
MCAC130N04-TP Micro Commercial Components (MCC)	N-CHANNEL MOSFET, DFN5060	0
MCM1216A-TP Micro Commercial Components (MCC)	MOSFET P-CH 20V 16A DFN2020-6JA	5700
SIL3415-TP Micro Commercial Components (MCC)	MOSFET P-CH 20V 4A SOT23-6L	4300
MCAC88N12-TP Micro Commercial Components (MCC)	N-CHANNEL MOSFET, DFN5060	0
MSJAC11N65Y-TP Micro Commercial Components (MCC)	MOSFET N-CH 650V 11A DFN5060	5000
MCAC88N12A-TP Micro Commercial Components (MCC)	N-CHANNEL MOSFET, DFN5060	0
MCMG66-TP Micro Commercial Components (MCC)	MOSFET P-CH 16V 5.8A DFN2020-6G	3000
SL3401A-TP Micro Commercial Components (MCC)	MOSFET P-CH 30V 4.4A SOT23-3L	2244
MCG04N10A-TP Micro Commercial Components (MCC)	MOSFET N-CH 100V 4A DFN3030-8	3000
MCAC80N08Y-TP Micro Commercial Components (MCC)	MOSFET N-CH 80V 80A DFN5060	4642
MCAC60P06-TP Micro Commercial Components (MCC)	MOSFET P-CH 60V 60A DFN5060	4985
MCAC35N10Y-TP Micro Commercial Components (MCC)	MOSFET N-CH 100V 35A DFN5060	4987
MCG16P03-TP Micro Commercial Components (MCC)	MOSFET P-CH 30V 16A DFN3030	3000
MCAC50P03B-TP Micro Commercial Components (MCC)	P-CHANNEL MOSFET, DFN5060	0
MCACD40N03-TP Micro Commercial Components (MCC)	N-CHANNEL MOSFET, DFN5060	0
MCQ05N15-TP Micro Commercial Components (MCC)	MOSFET N-CH 150V 5A 8SOP	0
MCAC45N10Y-TP Micro Commercial Components (MCC)	MOSFET N-CH 100V 45A DFN5060	5000
MCU20N15-TP Micro Commercial Components (MCC)	N-CHANNEL MOSFET, DPAK PACKAGE	2500

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS