Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
BSS138W-TP Micro Commercial Components (MCC)	MOSFET N-CH 50V 220MA SOT323	2377
MSJPF20N65-BP Micro Commercial Components (MCC)	MOSFET N-CH 650V 11A TO220F	2970
MCAC80N06Y-TP Micro Commercial Components (MCC)	MOSFET N-CH 60V 80A DFN5060	13642
SI2324A-TP Micro Commercial Components (MCC)	MOSFET N-CH 100V 2A SOT23	51
SI3134K-TP Micro Commercial Components (MCC)	MOSFET N-CH 20V 750MA SOT723	274
2N7002KT-TP Micro Commercial Components (MCC)	MOSFET N-CH 60V 340MA SOT23	0
MCU60N04-TP Micro Commercial Components (MCC)	MOSFET N-CH 40V 60A DPAK	3335
MCQ9435-TP Micro Commercial Components (MCC)	MOSFET P-CH 30V 5.1A 8SOP	6266
SI2102-TP Micro Commercial Components (MCC)	MOSFET N-CH 20V 2.1A SOT323	35260
MSJP20N65-BP Micro Commercial Components (MCC)	MOSFET N-CH TO220AB	4688
SI3407-TP Micro Commercial Components (MCC)	MOSFET P-CH 30V 4.1A SOT23	2985
MCU80N03A-TP Micro Commercial Components (MCC)	MOSFET N-CH 30V 80A DPAK	1457
SI2307-TP Micro Commercial Components (MCC)	MOSFET P-CH 30V 2.7A SOT23	633
MCB130N10Y-TP Micro Commercial Components (MCC)	MOSFET N-CH 100V 130A D2PAK	27140
MCQ4953-TP Micro Commercial Components (MCC)	MOSFET P-CH 30V 5.1A 8SOP	3607
MCU80N06A-TP Micro Commercial Components (MCC)	MOSFET N-CH 60V 80A DPAK	53
MCAC80N045Y-TP Micro Commercial Components (MCC)	N-CHANNEL MOSFET, DFN5060 PACKAG	30000
MCU30N02-TP Micro Commercial Components (MCC)	MOSFET N-CH 20V 30A DPAK	2177
SI2305-TP Micro Commercial Components (MCC)	MOSFET P-CH 8V 4.1A SOT23	8025
2N7002W-TP Micro Commercial Components (MCC)	MOSFET N-CH 60V 115MA SOT-323	17025

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS