Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
APT60M75JFLL Roving Networks / Microchip Technology	MOSFET N-CH 600V 58A ISOTOP	0
DN2450N8-G Roving Networks / Microchip Technology	MOSFET N-CH 500V 230MA TO243AA	0
APT50M65JLL Roving Networks / Microchip Technology	MOSFET N-CH 500V 58A ISOTOP	38
MSC015SMA070B Roving Networks / Microchip Technology	SICFET N-CH 700V 131A TO247-3	508
APT5020BVFRG Roving Networks / Microchip Technology	MOSFET N-CH 500V 26A TO247	0
APTM120DA30CT1G Roving Networks / Microchip Technology	MOSFET N-CH 1200V 31A SP1	0
TN2640K4-G Roving Networks / Microchip Technology	MOSFET N-CH 400V 500MA TO252	21490
VP2106N3-G Roving Networks / Microchip Technology	MOSFET P-CH 60V 250MA TO92-3	627
APT1003RSFLLG/TR Roving Networks / Microchip Technology	MOSFET N-CH 1KV 4A D3PAK	0
APT5020SVFRG/TR Roving Networks / Microchip Technology	MOSFET N-CH 500V 26A D3PAK	0
APT10050JVFR Roving Networks / Microchip Technology	MOSFET N-CH 1000V 19A ISOTOP	0
APT28M120L Roving Networks / Microchip Technology	MOSFET N-CH 1200V 29A TO264	0
APT77N60SC6/TR Roving Networks / Microchip Technology	MOSFET N-CH 600V 77A D3PAK	400
APT5024BFLLG Roving Networks / Microchip Technology	MOSFET N-CH 500V 22A TO247	0
APT37F50B Roving Networks / Microchip Technology	MOSFET N-CH 500V 37A TO247	2
LP0701N3-G Roving Networks / Microchip Technology	MOSFET P-CH 16.5V 500MA TO92	1223
APT10045B2LLG Roving Networks / Microchip Technology	MOSFET N-CH 1000V 23A T-MAX	0
TP2540N3-G Roving Networks / Microchip Technology	MOSFET P-CH 400V 86MA TO92-3	893
VN10KN3-G-P002 Roving Networks / Microchip Technology	MOSFET N-CH 60V 310MA TO92-3	1103
APT20M11JLL Roving Networks / Microchip Technology	MOSFET N-CH 200V 176A ISOTOP	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS