Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
TN2524N8-G Roving Networks / Microchip Technology	MOSFET N-CH 240V 360MA TO243AA	0
VN2410L-G-P014 Roving Networks / Microchip Technology	MOSFET N-CH 240V 190MA TO92-3	0
DN2540N3-G Roving Networks / Microchip Technology	MOSFET N-CH 400V 120MA TO92	1447
MSC100SM70JCU3 Roving Networks / Microchip Technology	TRANS SJT N-CH 700V 124A SOT227	0
APT94N65B2C6 Roving Networks / Microchip Technology	MOSFET N-CH 650V 95A T-MAX	0
LND250K1-G Roving Networks / Microchip Technology	MOSFET N-CH 500V 13MA SOT23	1976
MSC40SM120JCU3 Roving Networks / Microchip Technology	TRANS SJT N-CH 1.2KV 55A SOT227	54
TN2510N8-G Roving Networks / Microchip Technology	MOSFET N-CH 100V 730MA TO243AA	1932
APT10090SLLG Roving Networks / Microchip Technology	MOSFET N-CH 1000V 12A D3PAK	0
APT26F120B2 Roving Networks / Microchip Technology	MOSFET N-CH 1200V 27A T-MAX	0
APT42F50S Roving Networks / Microchip Technology	MOSFET N-CH 500V 42A D3PAK	0
APT10025JVR Roving Networks / Microchip Technology	MOSFET N-CH 1000V 34A ISOTOP	0
APT20M45SVFRG Roving Networks / Microchip Technology	MOSFET N-CH 200V 56A D3PAK	0
APT10021JFLL Roving Networks / Microchip Technology	MOSFET N-CH 1000V 37A ISOTOP	0
TP2535N3-G Roving Networks / Microchip Technology	MOSFET P-CH 350V 86MA TO92-3	743
APT6013LLLG Roving Networks / Microchip Technology	MOSFET N-CH 600V 43A TO264	0
APT106N60B2C6 Roving Networks / Microchip Technology	MOSFET N-CH 600V 106A T-MAX	2
APT5017BVRG Roving Networks / Microchip Technology	MOSFET N-CH 500V 30A TO247	0
APT60N60SCSG/TR Roving Networks / Microchip Technology	MOSFET N-CH 600V 60A D3PAK	0
VP0550N3-G Roving Networks / Microchip Technology	MOSFET P-CH 500V 54MA TO92-3	110

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS