Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
APT6030BVRG Roving Networks / Microchip Technology	MOSFET N-CH 600V 21A TO247	0
APT58F50J Roving Networks / Microchip Technology	MOSFET N-CH 500V 58A ISOTOP	0
APT40M70JVR Roving Networks / Microchip Technology	MOSFET N-CH 400V 53A SOT227	50
APT60M75JLL Roving Networks / Microchip Technology	MOSFET N-CH 600V 58A ISOTOP	0
APT8011JLL Roving Networks / Microchip Technology	MOSFET N-CH 800V 51A ISOTOP	0
VP2450N3-G Roving Networks / Microchip Technology	MOSFET P-CH 500V 100MA TO92-3	438
APT1003RSFLLG Roving Networks / Microchip Technology	MOSFET N-CH 1000V 4A D3PAK	0
APT47M60J Roving Networks / Microchip Technology	MOSFET N-CH 600V 49A ISOTOP	10
MSC080SMA120J Roving Networks / Microchip Technology	SICFET N-CH 1.2KV 35A SOT227	99
VP3203N8-G Roving Networks / Microchip Technology	MOSFET P-CH 30V 1.1A TO243AA	312
APT50M75JFLL Roving Networks / Microchip Technology	MOSFET N-CH 500V 51A ISOTOP	0
TN0610N3-G-P003 Roving Networks / Microchip Technology	MOSFET N-CH 100V 500MA TO92-3	0
APT30M85BVRG Roving Networks / Microchip Technology	MOSFET N-CH 300V 40A TO247	0
APT1201R6BVFRG Roving Networks / Microchip Technology	MOSFET N-CH 1200V 8A TO247	0
APT5010LLLG Roving Networks / Microchip Technology	MOSFET N-CH 500V 46A TO264	49
APT84M50L Roving Networks / Microchip Technology	MOSFET N-CH 500V 84A TO264	17
APT8024LFLLG Roving Networks / Microchip Technology	MOSFET N-CH 800V 31A TO264	0
MSC040SMA120S Roving Networks / Microchip Technology	SICFET N-CH 1200V 64A TO268	6
LP0701LG-G Roving Networks / Microchip Technology	MOSFET P-CH 16.5V 700MA 8SOIC	2718
APT14M100B Roving Networks / Microchip Technology	MOSFET N-CH 1000V 14A TO247	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS