Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
RCD051N20TL ROHM Semiconductor	MOSFET N-CH 200V 5A CPT3	0
US5U38TR ROHM Semiconductor	MOSFET P-CH 20V 1A TUMT5	2706
RJ1G08CGNTLL ROHM Semiconductor	MOSFET N-CH 40V 80A LPTL	1000
RSS065N03TB ROHM Semiconductor	MOSFET N-CH 30V 6.5A 8SOP	0
R6020JNZC8 ROHM Semiconductor	MOSFET N-CH 600V 20A TO3PF	30
SCT3120AW7TL ROHM Semiconductor	TRANS SJT N-CH 650V 21A TO263-7	1000
RSR020N06TL ROHM Semiconductor	MOSFET N-CH 60V 2A TSMT3	11263
RTQ020N05TR ROHM Semiconductor	MOSFET N-CH 45V 2A TSMT6	0
R5021ANJTL ROHM Semiconductor	MOSFET N-CH 500V 21A LPTS	0
RZF030P01TL ROHM Semiconductor	MOSFET P-CH 12V 3A TUMT3	37595
R5021ANX ROHM Semiconductor	MOSFET N-CH 500V 21A TO220FM	477
RTR025N03TL ROHM Semiconductor	MOSFET N-CH 30V 2.5A TSMT3	52608
SCT3080KLGC11 ROHM Semiconductor	SICFET N-CH 1200V 31A TO247N	1935
RRH090P03TB1 ROHM Semiconductor	MOSFET P-CH 30V 9A 8SOP	2146
RK7002BMHZGT116 ROHM Semiconductor	MOSFET N-CH 60V 250MA SST3	4618
R6012FNJTL ROHM Semiconductor	MOSFET N-CH 600V 12A LPT	938
SCT3030KLHRC11 ROHM Semiconductor	SICFET N-CH 1200V 72A TO247N	835
RS3E095BNGZETB ROHM Semiconductor	MOSFET N-CHANNEL 30V 9.5A 8SOP	4120
R6004KNX ROHM Semiconductor	MOSFET N-CH 600V 4A TO220FM	376
RD3G400GNTL ROHM Semiconductor	MOSFET N-CH 40V 40A TO252	2533

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS