Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
RQ6E060ATTCR ROHM Semiconductor	MOSFET P-CH 30V 6A TSMT6	2746
RD3L01BATTL1 ROHM Semiconductor	PCH -60V -10A POWER MOSFET - RD3	0
RSQ015P10HZGTR ROHM Semiconductor	MOSFET P-CH 100V 1.5A TSMT6	4965
RCJ120N25TL ROHM Semiconductor	MOSFET N-CH 250V 12A LPT	900
RRQ020P03TCR ROHM Semiconductor	MOSFET P-CH 30V 2A TSMT6	0
RD3P200SNTL1 ROHM Semiconductor	MOSFET N-CH 100V 20A TO252	2188
2SK3019TL ROHM Semiconductor	MOSFET N-CH 30V 100MA EMT3	304227
R6024ENX ROHM Semiconductor	MOSFET N-CH 600V 24A TO220FM	300
R6011END3TL1 ROHM Semiconductor	MOSFET N-CH 600V 11A TO252	2510
RF4C100BCTCR ROHM Semiconductor	MOSFET P-CH 20V 10A HUML2020L8	2303
SCT3080KRC14 ROHM Semiconductor	SICFET N-CH 1200V 31A TO247-4L	0
R6020ENJTL ROHM Semiconductor	MOSFET N-CH 600V 20A LPTS	360
RTE002P02TL ROHM Semiconductor	MOSFET P-CH 20V 200MA EMT3	0
RCJ081N20TL ROHM Semiconductor	MOSFET N-CH 200V 8A LPTS	926
R6020PNJFRATL ROHM Semiconductor	MOSFET N-CH 600V 20A LPTS	834
RSD046P05TL ROHM Semiconductor	MOSFET P-CH 45V 4.5A CPT3	51
R6006ANX ROHM Semiconductor	MOSFET N-CH 600V 6A TO220FM	1095
RF6C055BCTCR ROHM Semiconductor	MOSFET P-CHANNEL 20V 5.5A TUMT6	2990
RJK005N03FRAT146 ROHM Semiconductor	MOSFET N-CH 30V 500MA SMT3	110
RTR025N05HZGTL ROHM Semiconductor	MOSFET N-CH 45V 2.5A TSMT3	2946

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS