Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
IXTT16N20D2 Wickmann / Littelfuse	MOSFET N-CH 200V 16A TO268	0
IXFH18N60P Wickmann / Littelfuse	MOSFET N-CH 600V 18A TO247AD	420450
IXTX120P20T Wickmann / Littelfuse	MOSFET P-CH 200V 120A PLUS247-3	30
IXFH40N30 Wickmann / Littelfuse	MOSFET N-CH 300V 40A TO247AD	0
IXFN70N120SK Wickmann / Littelfuse	SICFET N-CH 1200V 68A SOT227B	0
IXFH11N80 Wickmann / Littelfuse	MOSFET N-CH 800V 11A TO247AD	0
IXTY1N100P Wickmann / Littelfuse	MOSFET N-CH 1000V 1A TO252	0
IXTA230N075T2 Wickmann / Littelfuse	MOSFET N-CH 75V 230A TO263	0
IXFT96N20P Wickmann / Littelfuse	MOSFET N-CH 200V 96A TO268	270
IXTA20N65X-TRL Wickmann / Littelfuse	MOSFET N-CH 650V 20A TO263	0
IXFN90N85X Wickmann / Littelfuse	MOSFET N-CH 850V 90A SOT227B	30
IXTP12N50P Wickmann / Littelfuse	MOSFET N-CH 500V 12A TO220AB	265350
IXFQ60N50P3 Wickmann / Littelfuse	MOSFET N-CH 500V 60A TO3P	2450
IXTK82N25P Wickmann / Littelfuse	MOSFET N-CH 250V 82A TO264	25
IXTH110N10L2 Wickmann / Littelfuse	MOSFET N-CH 100V 110A TO247	0
IXTA3N120-TRR Wickmann / Littelfuse	MOSFET N-CH 1200V 3A TO263	0
IXTZ550N055T2 Wickmann / Littelfuse	MOSFET N-CH 55V 550A DE475	0
IXFQ60N60X Wickmann / Littelfuse	MOSFET N-CH 600V 60A TO3P	1080
IXTK600N04T2 Wickmann / Littelfuse	MOSFET N-CH 40V 600A TO264	1875
IXFA230N075T2-TRL Wickmann / Littelfuse	MOSFET N-CH 75V 230A TO263	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS