Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
IXFP24N60X Wickmann / Littelfuse	MOSFET N-CH 600V 24A TO220AB	0
IXTA3N100D2HV-TRL Wickmann / Littelfuse	MOSFET N-CH 1000V 3A TO263HV	0
IXTT4N150HV Wickmann / Littelfuse	MOSFET N-CH 1500V 4A TO268	1080
IXFH12N100Q Wickmann / Littelfuse	MOSFET N-CH 1000V 12A TO247AD	0
IXTA170N075T2 Wickmann / Littelfuse	MOSFET N-CH 75V 170A TO263	2050
IXTT360N055T2 Wickmann / Littelfuse	MOSFET N-CH 55V 360A TO268	2160
IXTA48N20T Wickmann / Littelfuse	MOSFET N-CH 200V 48A TO263	0
IXFP4N85XM Wickmann / Littelfuse	MOSFET N-CH 850V 3.5A TO220	11
IXFA22N60P3 Wickmann / Littelfuse	MOSFET N-CH 600V 22A TO263AA	0
IXFH180N20X3 Wickmann / Littelfuse	MOSFET N-CH 200V 180A TO247	411140
IXFA130N10T Wickmann / Littelfuse	MOSFET N-CH 100V 130A TO263	850
IXTP15P15T Wickmann / Littelfuse	MOSFET P-CH 150V 15A TO220AB	800
IXTA32P05T Wickmann / Littelfuse	MOSFET P-CH 50V 32A TO263	10401150
IXTP12N65X2M Wickmann / Littelfuse	MOSFET N-CH 650V 12A TO220	0
IXTH30N50L2 Wickmann / Littelfuse	MOSFET N-CH 500V 30A TO247	243
IXFA7N100P Wickmann / Littelfuse	MOSFET N-CH 1000V 7A TO263	0
IXFH4N100Q Wickmann / Littelfuse	MOSFET N-CH 1000V 4A TO247AD	0
IXTH36P15P Wickmann / Littelfuse	MOSFET P-CH 150V 36A TO247	0
IXFX250N10P Wickmann / Littelfuse	MOSFET N-CH 100V 250A PLUS247-3	720
IXTQ69N30P Wickmann / Littelfuse	MOSFET N-CH 300V 69A TO3P	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS