Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
IXFK98N50P3 Wickmann / Littelfuse	MOSFET N-CH 500V 98A TO264AA	16
IXTA6N100D2-TRL Wickmann / Littelfuse	MOSFET N-CH 1000V 6A TO263	0
IXFA16N50P-TRL Wickmann / Littelfuse	MOSFET N-CH 500V 16A TO263	0
IXTA260N055T2 Wickmann / Littelfuse	MOSFET N-CH 55V 260A TO263	1350
IXFP10N60P Wickmann / Littelfuse	MOSFET N-CH 600V 10A TO220AB	300
IXTQ42N25P Wickmann / Littelfuse	MOSFET N-CH 250V 42A TO3P	1050
IXFN70N100X Wickmann / Littelfuse	MOSFET N-CH 1000V 56A SOT227B	3
IXTH7P50 Wickmann / Littelfuse	MOSFET P-CH 500V 7A TO247	15
IXTT30N60L2 Wickmann / Littelfuse	MOSFET N-CH 600V 30A TO268	1310
IXTP10P50P Wickmann / Littelfuse	MOSFET P-CH 500V 10A TO220AB	1236
IXTX40P50P Wickmann / Littelfuse	MOSFET P-CH 500V 40A PLUS247-3	2
IXTB30N100L Wickmann / Littelfuse	MOSFET N-CH 1000V 30A PLUS264	825
IXFH90N20X3 Wickmann / Littelfuse	MOSFET N-CH 200V 90A TO247	522400
IXTT140N10P Wickmann / Littelfuse	MOSFET N-CH 100V 140A TO268	2910
IXFN27N80Q Wickmann / Littelfuse	MOSFET N-CH 800V 27A SOT-227B	10
IXFP20N85X Wickmann / Littelfuse	MOSFET N-CH 850V 20A TO220AB	23
IXTA18P10T Wickmann / Littelfuse	MOSFET P-CH 100V 18A TO263	0
IXFA56N30X3 Wickmann / Littelfuse	MOSFET N-CH 300V 56A TO263AA	300
IXFB100N50Q3 Wickmann / Littelfuse	MOSFET N-CH 500V 100A PLUS264	0
IXTH6N120 Wickmann / Littelfuse	MOSFET N-CH 1200V 6A TO247	110

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS