Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
EPC2007C EPC	GANFET N-CH 100V 6A DIE OUTLINE	34096
EPC8009 EPC	GANFET N-CH 65V 2.7A DIE	12111
EPC2059 EPC	TRANS GAN 170V DIE .009OHM	17172
EPC2023 EPC	GANFET N-CH 30V 60A DIE	6404
EPC2031 EPC	GANFET NCH 60V 31A DIE	52297
EPC2019 EPC	GANFET N-CH 200V 8.5A DIE	56824
EPC2206 EPC	GANFET N-CH 80V 90A DIE	7078
EPC2215 EPC	GAN TRANS 200V 8MOHM BUMPED DIE	9074
EPC2015C EPC	GANFET N-CH 40V 53A DIE	6127
EPC2039 EPC	GANFET N-CH 80V 6.8A DIE	89118
EPC2020 EPC	GANFET N-CH 60V 90A DIE	5581
EPC2029 EPC	GANFET N-CH 80V 48A DIE	0
EPC2033 EPC	GANFET N-CH 150V 31A DIE	6209
EPC2055 EPC	GANFET N-CH 40V 29A DIE	1933
EPC2053 EPC	GANFET N-CH 100V 48A DIE	9363
EPC2052 EPC	GANFET N-CH 100V 8.2A DIE	0
EPC2032 EPC	GANFET N-CH 100V 48A DIE	31004
EPC2022 EPC	GANFET N-CH 100V 60A DIE	10073
EPC2212 EPC	GANFET N-CH 100V 18A DIE	47000
EPC2203 EPC	GANFET N-CH 80V 1.7A DIE	403

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS