Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
EPC2034C EPC	GANFET N-CH 200V 48A DIE	9816
EPC2035 EPC	GANFET N-CH 60V 1A DIE	2506
EPC2214 EPC	AEC-Q101 GAN FET 80V 20 MOHM	24315
EPC2207 EPC	TRANS GAN 200V DIE .022OHM	8621
EPC2045 EPC	GANFET N-CH 100V 16A DIE	54833
EPC2219 EPC	TRANS GAN 65V AECQ101 3.3OHM DIE	9975
EPC8010 EPC	GANFET N-CH 100V 2.7A DIE	5276
EPC2037 EPC	GANFET N-CH 100V 1.7A DIE	342308
EPC2204 EPC	TRANS GAN 100V DIE 5.6MOHM	4922
EPC2040 EPC	GANFET NCH 15V 3.4A DIE	42134
EPC8004 EPC	GANFET N-CH 40V 2.7A DIE	33003
EPC2036 EPC	GANFET N-CH 100V 1.7A DIE	446362
EPC2010C EPC	GANFET N-CH 200V 22A DIE OUTLINE	11234
EPC2202 EPC	GANFET N-CH 80V 18A DIE	51829
EPC2216 EPC	GANFET N-CH 15V 3.4A DIE	18611
EPC2001C EPC	GANFET N-CH 100V 36A DIE OUTLINE	89241
EPC2016C EPC	GANFET N-CH 100V 18A DIE	134646
EPC2038 EPC	GANFET N-CH 100V 500MA DIE	166921
EPC2014C EPC	GANFET N-CH 40V 10A DIE OUTLINE	28623
EPC2012C EPC	GANFET N-CH 200V 5A DIE OUTLINE	29227

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS