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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
DMP45H4D9HK3-13

DMP45H4D9HK3-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 450V 4.7A TO252

0
DMP3098L-7

DMP3098L-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 30V 3.8A SOT23-3

0
DMT6010LFG-7

DMT6010LFG-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 13A PWRDI3333

1622
DMP210DUFB4-7B

DMP210DUFB4-7B

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 200MA 3DFN

770000
2N7002K-7

2N7002K-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 380MA SOT23-3

1667884
DMN2050LQ-7

DMN2050LQ-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 5.9A SOT23

0
DMTH6005LK3-13

DMTH6005LK3-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 90A DPAK

0
DMP4025SFGQ-13

DMP4025SFGQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 40V 7.2A PWRDI3333-8

0
DMN3730UFB-7

DMN3730UFB-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 750MA 3DFN

1967
DMN2075U-7

DMN2075U-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 4.2A SOT23-3

2
DMN63D8LW-7

DMN63D8LW-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 380MA SOT323

43528
ZVN2110GTA

ZVN2110GTA

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 100V 500MA SOT223

4415
ZXMN6A08E6QTA

ZXMN6A08E6QTA

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 2.8A SOT26

1688
DMNH6008SCTQ

DMNH6008SCTQ

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 130A TO220AB

2850
DMP2040UFDF-13

DMP2040UFDF-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 13A 6UDFN

0
DMN10H170SK3-13

DMN10H170SK3-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 100V 12A TO252-3

3473
DMP4015SK3-13

DMP4015SK3-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 40V 14A TO252

0
DMN3010LSS-13

DMN3010LSS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 16A 8SOP

0
DMNH10H028SPSQ-13

DMNH10H028SPSQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 100V 40A PWRDI5060-8

2445
DMN62D0UW-7

DMN62D0UW-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 340MA SOT323

984939000

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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